Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

R Brüggemann; Ming Xu; J Alvarez; Mohamed Boutchich; Jean-Paul Kleider

Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

R Brüggemann ¹ Ming Xu ¹ J Alvarez ¹ Mohamed Boutchich ¹ Jean-Paul Kleider ¹

1 GeePs - Laboratoire Génie électrique et électronique de Paris

Document type :

Poster communications

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Electric power

Engineering Sciences [physics] / Optics / Photonic

Engineering Sciences [physics] / Materials

Liste complète des métadonnées

https://hal-centralesupelec.archives-ouvertes.fr/hal-01632914
Contributor : Jean-Paul Kleider <>
Submitted on : Friday, November 10, 2017 - 5:21:05 PM
Last modification on : Thursday, March 21, 2019 - 2:39:48 PM

Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

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Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

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