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Poster communications
Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements
R Brüggemann 1
Author
Ming Xu 1
Author
J Alvarez 1
Author IdHAL : jose-alvarez ORCID : https://orcid.org/0000-0003-3558-8302
Mohamed Boutchich 1
Author IdHAL : mohamed-boutchich
Jean-Paul Kleider 1
Author IdHAL : jean-paul-kleider ORCID : https://orcid.org/0000-0003-4388-6326
1
GeePs - Laboratoire Génie électrique et électronique de Paris (11, rue Joliot Curie
Plateau de Moulon
91192 Gif sur Yvette - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
- UPMC - Université Pierre et Marie Curie - Paris 6 (4 place Jussieu - 75005 Paris - France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8507 (France)
Document type :
Poster communications
Domain :
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632914
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:21:05 PM
Last modification on : Wednesday, September 8, 2021 - 6:07:29 PM
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:21:05 PM
Last modification on : Wednesday, September 8, 2021 - 6:07:29 PM
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- HAL Id : hal-01632914, version 1
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Citation
R Brüggemann, Ming Xu, J Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements. Silicon PV 2017, Apr 2017, Freiburg, Germany. ⟨hal-01632914⟩
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