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Poster communications

Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

R Brüggemann 1 Ming Xu 1 J Alvarez 1 Mohamed Boutchich 1 Jean-Paul Kleider 1 
1 GeePs - Laboratoire Génie électrique et électronique de Paris
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632914
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:21:05 PM
Last modification on : Sunday, June 26, 2022 - 5:22:01 AM

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  • HAL Id : hal-01632914, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

R Brüggemann, Ming Xu, J Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements. Silicon PV 2017, Apr 2017, Freiburg, Germany. ⟨hal-01632914⟩

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