Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electric power Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Materials

Jean-Paul KLEIDER : Connect in order to contact the contributor

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Submitted on : Friday, November 10, 2017-5:21:05 PM

Last modification on : Thursday, October 6, 2022-10:45:02 AM

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hal-01632914 , version 1 (10-11-2017)

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HAL Id : hal-01632914 , version 1

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R Brüggemann, Ming Xu, J Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements. Silicon PV 2017, Apr 2017, Freiburg, Germany. ⟨hal-01632914⟩

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