Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements - CentraleSupélec Access content directly
Conference Poster Year :

Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

Domains

Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics Electric power Optics / Photonic Materials

Jean-Paul KLEIDER  : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01632914

Submitted on : Friday, November 10, 2017-5:21:05 PM

Last modification on : Friday, March 24, 2023-2:53:05 PM

Not file

Dates and versions

hal-01632914 , version 1 (10-11-2017)

Identifiers

  • HAL Id : hal-01632914 , version 1

Cite

R Brüggemann, Ming Xu, J Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements. Silicon PV 2017, Apr 2017, Freiburg, Germany. ⟨hal-01632914⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

UPMC CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GS-ENGINEERING GS-PHYSIQUE INSTITUT-SCIENCES-LUMIERE
55 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More