Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells

Gwenaëlle Hamon (1) , Nicolas Vaissiere Vaissière (1) , Jean Decobert (2) , Raphaël Lachaume (3) , Romain Cariou (1) , Wanghua Chen (1) , J Alvarez (3) , Jean-Paul Kleider (3) , Pere Roca I Cabarrocas Roca I Cabarrocas (1)

1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 III-V Lab - Alcatel-Thalès III-V lab
3 GeePs - Laboratoire Génie électrique et électronique de Paris

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Materials

Gwenaëlle Hamon, Nicolas Vaissiere Vaissière, Jean Decobert, Raphaël Lachaume, Romain Cariou, et al.. Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells. 13th International Conference on Concentrator Photovoltaic Systems (CPV 13), May 2017, Ottawa, Canada. ⟨hal-01632921⟩