Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD - CentraleSupélec Access content directly
Conference Papers Year :
Not file

Dates and versions

hal-01632928 , version 1 (10-11-2017)

Identifiers

  • HAL Id : hal-01632928 , version 1

Cite

A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD. Photovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France. ⟨hal-01632928⟩
88 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More