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Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD

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hal-01632928 , version 1 (10-11-2017)

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  • HAL Id : hal-01632928 , version 1

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A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD. Photovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France. ⟨hal-01632928⟩
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