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Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electric power Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Materials

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632928

Submitted on : Friday, November 10, 2017-5:33:11 PM

Last modification on : Sunday, June 26, 2022-5:28:04 AM

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hal-01632928 , version 1 (10-11-2017)

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  • HAL Id : hal-01632928 , version 1

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A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD. Photovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France. ⟨hal-01632928⟩

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UPMC CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GS-ENGINEERING INSTITUT-SCIENCES-LUMIERE
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