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Conference papers

Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD

A.S. Gudovskikh 1 A.V. Uvarov 1 I.A. Morozov 1 Artem Baranov 1 D. A. Kudryashov 1 Alexandra Levtchenko 2 Sylvain Le Gall 2 Jean-Paul Kleider 2 
1 Saint Petersburg Academic University
2 GeePs - Laboratoire Génie électrique et électronique de Paris
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632928
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:33:11 PM
Last modification on : Sunday, June 26, 2022 - 5:28:04 AM

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  • HAL Id : hal-01632928, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD. Photovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France. ⟨hal-01632928⟩

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