Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD

A.S. Gudovskikh (1) , A.V. Uvarov (1) , I.A. Morozov (1) , Artem Baranov (1) , D. A. Kudryashov (1) , Alexandra Levtchenko (2) , Sylvain Le Gall (2) , Jean-Paul Kleider (2)

1 Saint Petersburg Academic University
2 GeePs - Laboratoire Génie électrique et électronique de Paris

Domains: Materials Science [cond-mat.mtrl-sci]; Micro and nanotechnologies/Microelectronics; Electric power; Optics / Photonic; Materials

A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD. Photovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France. ⟨hal-01632928⟩