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Conference papers
Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD
A.S. Gudovskikh
1
A.V. Uvarov
1
I.A. Morozov
1
Artem Baranov
1
D. A. Kudryashov
1
Alexandra Levtchenko
2
Sylvain Le Gall
2
Jean-Paul Kleider
2
D. A. Kudryashov 1
Author
Alexandra Levtchenko 2
Author IdHAL : alexandra-levtchenko
Sylvain Le Gall 2
Author IdHAL : sylvain-le-gall ORCID : https://orcid.org/0000-0003-3941-5994
Jean-Paul Kleider 2
Author IdHAL : jean-paul-kleider ORCID : https://orcid.org/0000-0003-4388-6326
2
GeePs - Laboratoire Génie électrique et électronique de Paris (11, rue Joliot Curie
Plateau de Moulon
91192 Gif sur Yvette - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8507 (France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- UPMC - Université Pierre et Marie Curie - Paris 6 (4 place Jussieu - 75005 Paris - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
Document type :
Conference papers
Domain :
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632928
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:33:11 PM
Last modification on : Thursday, September 9, 2021 - 3:02:43 AM
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:33:11 PM
Last modification on : Thursday, September 9, 2021 - 3:02:43 AM
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- HAL Id : hal-01632928, version 1
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Citation
A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD. Photovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France. ⟨hal-01632928⟩
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