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Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632928
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:33:11 PM
Last modification on : Thursday, September 9, 2021 - 3:02:43 AM

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  • HAL Id : hal-01632928, version 1

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A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALD. Photovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France. ⟨hal-01632928⟩

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