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Poster communications

n-GaP/p-Si heterojunction solar cells fabricated by PE-ALD

Alexander S. Gudovskikh 1 A.V. Uvarov 1 Ivan A. Morozov 1 Artem I. Baranov 2, 1 D. A. Kudryashov 1 Ekaterina V. Nikitina 1 Jean-Paul Kleider 2 
1 Saint Petersburg Academic University
2 GeePs - Laboratoire Génie électrique et électronique de Paris
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632938
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:42:32 PM
Last modification on : Sunday, June 26, 2022 - 10:01:25 AM

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  • HAL Id : hal-01632938, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Alexander S. Gudovskikh, A.V. Uvarov, Ivan A. Morozov, Artem I. Baranov, D. A. Kudryashov, et al.. n-GaP/p-Si heterojunction solar cells fabricated by PE-ALD. E-MRS 2017 Spring Meeting, May 2017, Strasbourg, France. ⟨hal-01632938⟩

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