Characterization of GaP/Si heterojunctions by space charge capacitance measurements

Artem I. Baranov (1, 2) , Alexander S. Gudovskikh (2) , I.A. Morozov (2) , A. Mozharov (2) , Ekaterina V. Nikitina (2) , Kirill S. Zelentsov (2) , Arouna Darga (1) , Sylvain Le Gall (1) , Jean-Paul Kleider (1)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 Saint Petersburg Academic University

Domains: Materials Science [cond-mat.mtrl-sci]; Micro and nanotechnologies/Microelectronics; Electric power; Optics / Photonic; Materials

Artem I. Baranov, Alexander S. Gudovskikh, I.A. Morozov, A. Mozharov, Ekaterina V. Nikitina, et al.. Characterization of GaP/Si heterojunctions by space charge capacitance measurements. E-MRS 2017 Spring Meeting, May 2017, Strasbourg, France. ⟨hal-01632942⟩