Characterization of GaP/Si heterojunctions by space charge capacitance measurements - Archive ouverte HAL Access content directly
Conference Papers Year :

Characterization of GaP/Si heterojunctions by space charge capacitance measurements

(1, 2) , (2) , (2) , (2) , (2) , (2) , (1) , (1) , (1)
1
2

Domains

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electric power Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Materials

Jean-Paul KLEIDER  : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01632942

Submitted on : Friday, November 10, 2017-5:46:40 PM

Last modification on : Sunday, June 26, 2022-5:16:00 AM

Not file

Dates and versions

hal-01632942 , version 1 (10-11-2017)

Identifiers

  • HAL Id : hal-01632942 , version 1

Cite

Artem I. Baranov, Alexander S. Gudovskikh, I.A. Morozov, A. Mozharov, Ekaterina V. Nikitina, et al.. Characterization of GaP/Si heterojunctions by space charge capacitance measurements. E-MRS 2017 Spring Meeting, May 2017, Strasbourg, France. ⟨hal-01632942⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

UPMC CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GS-ENGINEERING INSTITUT-SCIENCES-LUMIERE
71 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More