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Characterization of GaP/Si heterojunctions by space charge capacitance measurements

Artem I. Baranov 1, 2 Alexander S. Gudovskikh 2 I.A. Morozov 2 A. Mozharov 2 Ekaterina V. Nikitina 2 Kirill S. Zelentsov 2 Arouna Darga 1 Sylvain Le Gall 1 Jean-Paul Kleider 1 
1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 Saint Petersburg Academic University
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632942
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:46:40 PM
Last modification on : Sunday, June 26, 2022 - 5:16:00 AM

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  • HAL Id : hal-01632942, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Artem I. Baranov, Alexander S. Gudovskikh, I.A. Morozov, A. Mozharov, Ekaterina V. Nikitina, et al.. Characterization of GaP/Si heterojunctions by space charge capacitance measurements. E-MRS 2017 Spring Meeting, May 2017, Strasbourg, France. ⟨hal-01632942⟩

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