Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer - CentraleSupélec Access content directly
Journal Articles Journal of Physics D: Applied Physics Year : 2016

Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

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hal-01632945 , version 1 (10-11-2017)

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Akhil Rajan, David J Rogers, Cuong Ton-That, Liangchen Zhu, Matthew R Phillips, et al.. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer. Journal of Physics D: Applied Physics, 2016, 49 (31), ⟨10.1088/0022-3727/49/31/315105⟩. ⟨hal-01632945⟩
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