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Journal articles
Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer
Akhil Rajan 1 David J Rogers 2 Cuong Ton-That 3 Liangchen Zhu 3 Matthew R Phillips 3 Suresh Sundaram 4 Simon Gautier 4 Tarik Moudakir 4 Youssef El-Gmili 4 Abdallah Ougazzaden 4 Vinod E Sandana 2 Ferechteh H Teherani 2 Philippe Bove 2 Kevin A Prior 1 Zakaria Djebbour 5, 6 Ryan Mcclintock 7 Manijeh Razeghi 7
Youssef El-Gmili 4
Author
Abdallah Ougazzaden 4
Author
Vinod E Sandana 2
Author
Ferechteh H Teherani 2
Author
Manijeh Razeghi 7
Author
1
HWU - Heriot-Watt University [Edinburgh] (Edinburgh, Scotland, UK EH14 4AS - United Kingdom)
2
Nanovation - Nanovation SARL (103 bis Rue de Versailles, Orsay, 91400, France. - France)
- Nanovation SARL (France)
3
UTS - University of Technology Sydney (City campus
15 Broadway
Ultimo NSW 2007 - Australia)
4
Georgia Tech Lorraine [Metz] (Metz Technopôle 2-3 rue Marconi 57070 METZ - France)
- Ecole Nationale Supérieure des Arts et Metiers Metz (France)
- Georgia Institute of Technology [Atlanta] (North Avenue, Atlanta, GA 30332 - United States)
- Ecole Supérieure d'Electricité - SUPELEC (FRANCE) (France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- CNRS - Centre National de la Recherche Scientifique : IRL2958 / UMI2958 (France)
- UFC - Université de Franche-Comté (1 rue Goudimel 25030 Besançon cedex - France)
5
GeePs - Laboratoire Génie électrique et électronique de Paris (11, rue Joliot Curie
Plateau de Moulon
91192 Gif sur Yvette - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
- UPMC - Université Pierre et Marie Curie - Paris 6 (4 place Jussieu - 75005 Paris - France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8507 (France)
6
UVSQ - Université de Versailles Saint-Quentin-en-Yvelines (55 avenue de Paris - 78035 Versailles cedex - France)
7
Northwestern University [Evanston] (633 Clark Street, Evanston, IL 60208 Evanston - United States)
Document type :
Journal articles
Complete list of metadata
https://hal-centralesupelec.archives-ouvertes.fr/hal-01632945
Contributor : Thierry Leblanc Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:49:16 PM
Last modification on : Saturday, June 25, 2022 - 10:27:02 PM
Contributor : Thierry Leblanc Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 5:49:16 PM
Last modification on : Saturday, June 25, 2022 - 10:27:02 PM
Identifiers
- HAL Id : hal-01632945, version 1
- DOI : 10.1088/0022-3727/49/31/315105
Collections
UPMC | CNRS | UNIV-FCOMTE | UVSQ | CENTRALESUPELEC | GEEPS | PHEMADIC | UMI-GTL | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE
Citation
Akhil Rajan, David J Rogers, Cuong Ton-That, Liangchen Zhu, Matthew R Phillips, et al.. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer. Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (31), ⟨10.1088/0022-3727/49/31/315105⟩. ⟨hal-01632945⟩
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