Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

Akhil Rajan (1) , David J Rogers (2) , Cuong Ton-That (3) , Liangchen Zhu (3) , Matthew R Phillips (3) , Suresh Sundaram (4) , Simon Gautier (4) , Tarik Moudakir (4) , Youssef El-Gmili (4) , Abdallah Ougazzaden (4) , Vinod E Sandana (2) , Ferechteh H Teherani (2) , Philippe Bove (2) , Kevin A Prior (1) , Zakaria Djebbour (5, 6) , Ryan Mcclintock (7) , Manijeh Razeghi (7)

1 HWU - Heriot-Watt University [Edinburgh]
2 Nanovation - Nanovation SARL
3 UTS - University of Technology Sydney
4 Georgia Tech Lorraine [Metz]
5 GeePs - Laboratoire Génie électrique et électronique de Paris
6 UVSQ - Université de Versailles Saint-Quentin-en-Yvelines
7 Northwestern University [Evanston]

Domains: Physics [physics]; Engineering Sciences [physics]; Materials

Akhil Rajan, David J Rogers, Cuong Ton-That, Liangchen Zhu, Matthew R Phillips, et al.. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer. Journal of Physics D: Applied Physics, 2016, 49 (31), ⟨10.1088/0022-3727/49/31/315105⟩. ⟨hal-01632945⟩