Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer - Archive ouverte HAL Access content directly
Journal Articles Journal of Physics D: Applied Physics Year : 2016

Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

(1) , (2) , (3) , (3) , (3) , (4) , (4) , (4) , (4) , (4) , (2) , (2) , (2) , (1) , (5, 6) , (7) , (7)
1
2
3
4
5
6
7
Not file

Dates and versions

hal-01632945 , version 1 (10-11-2017)

Identifiers

Cite

Akhil Rajan, David J Rogers, Cuong Ton-That, Liangchen Zhu, Matthew R Phillips, et al.. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer. Journal of Physics D: Applied Physics, 2016, 49 (31), ⟨10.1088/0022-3727/49/31/315105⟩. ⟨hal-01632945⟩
97 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More