Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer
Akhil Rajan
(1)
,
David J Rogers
(2)
,
Cuong Ton-That
(3)
,
Liangchen Zhu
(3)
,
Matthew R Phillips
(3)
,
Suresh Sundaram
(4)
,
Simon Gautier
(4)
,
Tarik Moudakir
(4)
,
Youssef El-Gmili
(4)
,
Abdallah Ougazzaden
(4)
,
Vinod E Sandana
(2)
,
Ferechteh H Teherani
(2)
,
Philippe Bove
(2)
,
Kevin A Prior
(1)
,
Zakaria Djebbour
(5, 6)
,
Ryan Mcclintock
(7)
,
Manijeh Razeghi
(7)
1
HWU -
Heriot-Watt University [Edinburgh]
2 Nanovation - Nanovation SARL
3 UTS - University of Technology Sydney
4 Georgia Tech Lorraine [Metz]
5 GeePs - Laboratoire Génie électrique et électronique de Paris
6 UVSQ - Université de Versailles Saint-Quentin-en-Yvelines
7 Northwestern University [Evanston]
2 Nanovation - Nanovation SARL
3 UTS - University of Technology Sydney
4 Georgia Tech Lorraine [Metz]
5 GeePs - Laboratoire Génie électrique et électronique de Paris
6 UVSQ - Université de Versailles Saint-Quentin-en-Yvelines
7 Northwestern University [Evanston]