Low temperature plasma epitaxy of Silicon on III-V for tandem solar cells

Gwenaelle Hamon (1) , Nicolas Vaissiere Vaissière (1) , Romain Cariou (1) , Wanghua Chen (1) , Martin Foldyna (1) , Raphaël Lachaume (2) , Jean-Luc Maurice (1) , José Alvarez (2) , Jean Decobert (3) , Jean-Paul Kleider (2) , Pere Roca I. Cabarrocas (1)

1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 GeePs - Laboratoire Génie électrique et électronique de Paris
3 III-V Lab - Alcatel-Thalès III-V lab

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Materials

Gwenaelle Hamon, Nicolas Vaissiere Vaissière, Romain Cariou, Wanghua Chen, Martin Foldyna, et al.. Low temperature plasma epitaxy of Silicon on III-V for tandem solar cells. International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany. ⟨hal-01632964⟩