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Low temperature plasma epitaxy of Silicon on III-V for tandem solar cells

Gwenaelle Hamon 1 Nicolas Vaissiere Vaissière 1 Romain Cariou 1 Wanghua Chen 1 Martin Foldyna 1 Raphaël Lachaume 2 Jean-Luc Maurice 1 José Alvarez 2 Jean Decobert 3 Jean-Paul Kleider 2 Pere Roca I. Cabarrocas 1 
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 GeePs - Laboratoire Génie électrique et électronique de Paris
3 III-V Lab - Alcatel-Thalès III-V lab
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01632964
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Friday, November 10, 2017 - 6:13:21 PM
Last modification on : Saturday, June 25, 2022 - 10:27:03 PM

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  • HAL Id : hal-01632964, version 1

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Citation

Gwenaelle Hamon, Nicolas Vaissiere Vaissière, Romain Cariou, Wanghua Chen, Martin Foldyna, et al.. Low temperature plasma epitaxy of Silicon on III-V for tandem solar cells. International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany. ⟨hal-01632964⟩

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