Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Artem Baranov; Alexander S. Gudovskikh; Arouna Darga; Sylvain Le Gall; Jean-Paul Kleider

Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Artem Baranov ^{1, 2} Alexander S. Gudovskikh ^{2, 3} Arouna Darga ¹ Sylvain Le Gall ¹ Jean-Paul Kleider ¹

1 GeePs - Laboratoire Génie électrique et électronique de Paris

3 Saint Petersburg Electrotechnical University "LETI"

Abstract : Thin layers of μc-GaP and a-GaP grown on n- type silicon wafers by plasmaenhanced atomic layer deposition at 380 C are characterized by space charge capacitance techniques, C-V profiling and deep level transient spectroscopy (DLTS). Two defect levels with activation energies of 0.30 eV and 0.80 eV were detected by DLTS in the μc-GaP/n-Si structure. Measurements performed on Schottky barriers formed on n-Si after selective etching of the GaP layer did not reveal any defect level meaning that the observed defects in the μc-GaP/n-Si structure are related to μc-GaP layer.

Document type :

Poster communications

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadatas

https://hal-centralesupelec.archives-ouvertes.fr/hal-01653684
Contributor : Sylvain Le Gall <>
Submitted on : Friday, December 1, 2017 - 5:16:59 PM
Last modification on : Thursday, September 12, 2019 - 5:16:02 PM

Capacitance characterization of GaP/n-Si structures grown by PE-ALD

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Capacitance characterization of GaP/n-Si structures grown by PE-ALD

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