Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Abstract : Thin layers of μc-GaP and a-GaP grown on n- type silicon wafers by plasmaenhanced atomic layer deposition at 380 C are characterized by space charge capacitance techniques, C-V profiling and deep level transient spectroscopy (DLTS). Two defect levels with activation energies of 0.30 eV and 0.80 eV were detected by DLTS in the μc-GaP/n-Si structure. Measurements performed on Schottky barriers formed on n-Si after selective etching of the GaP layer did not reveal any defect level meaning that the observed defects in the μc-GaP/n-Si structure are related to μc-GaP layer.
Type de document :
Poster
4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint-Petersburg OPEN 2017), Apr 2017, Saint-Petersbourg, France. 917, pp.052027, 2017, Journal of Physics : Conference series. 〈10.1088/1742-6596/917/5/052027〉
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01653684
Contributeur : Sylvain Le Gall <>
Soumis le : vendredi 1 décembre 2017 - 17:16:59
Dernière modification le : jeudi 5 avril 2018 - 12:30:24

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Artem Baranov, Alexander S. Gudovskikh, Arouna Darga, Sylvain Le Gall, Jean-Paul Kleider. Capacitance characterization of GaP/n-Si structures grown by PE-ALD. 4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint-Petersburg OPEN 2017), Apr 2017, Saint-Petersbourg, France. 917, pp.052027, 2017, Journal of Physics : Conference series. 〈10.1088/1742-6596/917/5/052027〉. 〈hal-01653684〉

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