Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Abstract : Thin layers of μc-GaP and a-GaP grown on n- type silicon wafers by plasmaenhanced atomic layer deposition at 380 C are characterized by space charge capacitance techniques, C-V profiling and deep level transient spectroscopy (DLTS). Two defect levels with activation energies of 0.30 eV and 0.80 eV were detected by DLTS in the μc-GaP/n-Si structure. Measurements performed on Schottky barriers formed on n-Si after selective etching of the GaP layer did not reveal any defect level meaning that the observed defects in the μc-GaP/n-Si structure are related to μc-GaP layer.
Document type :
Poster communications
Complete list of metadatas

https://hal-centralesupelec.archives-ouvertes.fr/hal-01653684
Contributor : Sylvain Le Gall <>
Submitted on : Friday, December 1, 2017 - 5:16:59 PM
Last modification on : Thursday, September 12, 2019 - 5:16:02 PM

Links full text

Identifiers

Citation

Artem Baranov, Alexander S. Gudovskikh, Arouna Darga, Sylvain Le Gall, Jean-Paul Kleider. Capacitance characterization of GaP/n-Si structures grown by PE-ALD. 4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint-Petersburg OPEN 2017), Apr 2017, Saint-Petersbourg, France. 917, pp.052027, 2017, Journal of Physics : Conference series. ⟨10.1088/1742-6596/917/5/052027⟩. ⟨hal-01653684⟩

Share

Metrics

Record views

207