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Conference papers
Capacitance characterization of GaP/n-Si structures grown by PE-ALD
Abstract : Thin layers of μc-GaP and a-GaP grown on n- type silicon wafers by plasmaenhanced atomic layer deposition at 380 C are characterized by space charge capacitance techniques, C-V profiling and deep level transient spectroscopy (DLTS). Two defect levels with activation energies of 0.30 eV and 0.80 eV were detected by DLTS in the μc-GaP/n-Si structure. Measurements performed on Schottky barriers formed on n-Si after selective etching of the GaP
layer did not reveal any defect level meaning that the observed defects in the μc-GaP/n-Si structure are related to μc-GaP layer.
Cited literature [11 references]
https://hal-centralesupelec.archives-ouvertes.fr/hal-01653684
Contributor : Sylvain Le Gall Connect in order to contact the contributor
Submitted on : Wednesday, March 11, 2020 - 3:06:05 PM
Last modification on : Thursday, September 9, 2021 - 3:02:42 AM
Long-term archiving on: : Friday, June 12, 2020 - 4:14:46 PM
Contributor : Sylvain Le Gall Connect in order to contact the contributor
Submitted on : Wednesday, March 11, 2020 - 3:06:05 PM
Last modification on : Thursday, September 9, 2021 - 3:02:42 AM
Long-term archiving on: : Friday, June 12, 2020 - 4:14:46 PM
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baranov2017.pdf
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