HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Conference papers

Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Abstract : Thin layers of μc-GaP and a-GaP grown on n- type silicon wafers by plasmaenhanced atomic layer deposition at 380 C are characterized by space charge capacitance techniques, C-V profiling and deep level transient spectroscopy (DLTS). Two defect levels with activation energies of 0.30 eV and 0.80 eV were detected by DLTS in the μc-GaP/n-Si structure. Measurements performed on Schottky barriers formed on n-Si after selective etching of the GaP layer did not reveal any defect level meaning that the observed defects in the μc-GaP/n-Si structure are related to μc-GaP layer.
Complete list of metadata

Cited literature [11 references]  Display  Hide  Download

Contributor : Sylvain Le Gall Connect in order to contact the contributor
Submitted on : Wednesday, March 11, 2020 - 3:06:05 PM
Last modification on : Thursday, September 9, 2021 - 3:02:42 AM
Long-term archiving on: : Friday, June 12, 2020 - 4:14:46 PM


Publication funded by an institution



Artem Baranov, Alexander S. Gudovskikh, Arouna Darga, Sylvain Le Gall, Jean-Paul Kleider. Capacitance characterization of GaP/n-Si structures grown by PE-ALD. 4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint-Petersburg OPEN 2017), Apr 2017, Saint-Petersbourg, France. pp.052027, ⟨10.1088/1742-6596/917/5/052027⟩. ⟨hal-01653684⟩



Record views


Files downloads