Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Artem Baranov (1, 2) , Alexander S. Gudovskikh (2, 3) , Arouna Darga (1) , Sylvain Le Gall (1) , Jean-Paul Kleider (1)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 Saint-Petersburg Scientific Center
3 Saint Petersburg Electrotechnical University "LETI"

Thin layers of μc-GaP and a-GaP grown on n- type silicon wafers by plasmaenhanced atomic layer deposition at 380 C are characterized by space charge capacitance techniques, C-V profiling and deep level transient spectroscopy (DLTS). Two defect levels with activation energies of 0.30 eV and 0.80 eV were detected by DLTS in the μc-GaP/n-Si structure. Measurements performed on Schottky barriers formed on n-Si after selective etching of the GaP layer did not reveal any defect level meaning that the observed defects in the μc-GaP/n-Si structure are related to μc-GaP layer.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Artem Baranov, Alexander S. Gudovskikh, Arouna Darga, Sylvain Le Gall, Jean-Paul Kleider. Capacitance characterization of GaP/n-Si structures grown by PE-ALD. 4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint-Petersburg OPEN 2017), Apr 2017, Saint-Petersbourg, France. pp.052027, ⟨10.1088/1742-6596/917/5/052027⟩. ⟨hal-01653684⟩