Contactless investigation of the doping concentration level of single GaAsμ-crystals grown on Silicon for multijunctionsolar cells - CentraleSupélec Access content directly
Conference Papers Year :

Contactless investigation of the doping concentration level of single GaAsμ-crystals grown on Silicon for multijunctionsolar cells

Not file

Dates and versions

hal-01721130 , version 1 (01-03-2018)

Identifiers

  • HAL Id : hal-01721130 , version 1

Cite

Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Denis Mencaraglia. Contactless investigation of the doping concentration level of single GaAsμ-crystals grown on Silicon for multijunctionsolar cells. Multiscale Solar, Feb 2018, Wroclaw, Poland. ⟨hal-01721130⟩
82 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More