Contactless investigation of the doping concentration level of single GaAsμ-crystals grown on Silicon for multijunctionsolar cells - CentraleSupélec Access content directly
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Contactless investigation of the doping concentration level of single GaAsμ-crystals grown on Silicon for multijunctionsolar cells

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Materials Science [cond-mat.mtrl-sci] Optics / Photonic

Alexandre Jaffré  : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01721130

Submitted on : Thursday, March 1, 2018-5:25:26 PM

Last modification on : Friday, March 24, 2023-2:53:06 PM

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hal-01721130 , version 1 (01-03-2018)

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  • HAL Id : hal-01721130 , version 1

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Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Denis Mencaraglia. Contactless investigation of the doping concentration level of single GaAsμ-crystals grown on Silicon for multijunctionsolar cells. Multiscale Solar, Feb 2018, Wroclaw, Poland. ⟨hal-01721130⟩

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UPMC CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GS-ENGINEERING GS-PHYSIQUE INSTITUT-SCIENCES-LUMIERE
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