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Contactless investigation of the doping concentration level of single GaAsμ-crystals grown on Silicon for multijunctionsolar cells

Alexandre Jaffré 1 J Alvarez 1 Jean-Paul Kleider 1 Denis Mencaraglia 1
1 GeePs - Laboratoire Génie électrique et électronique de Paris
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01721130
Contributor : Alexandre Jaffré <>
Submitted on : Thursday, March 1, 2018 - 5:25:26 PM
Last modification on : Tuesday, July 20, 2021 - 3:05:09 AM

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  • HAL Id : hal-01721130, version 1

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CENTRALESUPELEC | PHEMADIC | GEEPS | UPMC | CNRS | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING

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Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Denis Mencaraglia. Contactless investigation of the doping concentration level of single GaAsμ-crystals grown on Silicon for multijunctionsolar cells. Multiscale Solar, Feb 2018, Wroclaw, Poland. ⟨hal-01721130⟩

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