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Poster communications

Silicon doping of GaP layers grown by time-modulated PECVD

Artem Baranov 1, 2 I.A. Morozov 1 A.V. Uvarov 1 G. E. Yakovlev Jean-Paul Kleider 2 
1 Saint Petersburg Academic University
2 GeePs - Laboratoire Génie électrique et électronique de Paris
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01801312
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Monday, May 28, 2018 - 1:39:18 PM
Last modification on : Sunday, June 26, 2022 - 9:44:38 AM

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  • HAL Id : hal-01801312, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Artem Baranov, I.A. Morozov, A.V. Uvarov, G. E. Yakovlev, Jean-Paul Kleider. Silicon doping of GaP layers grown by time-modulated PECVD. Saint-Petersburg OPEN 2018, 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Apr 2018, Saint-Pétersbourg, Russia. ⟨hal-01801312⟩

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