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Silicon doping of GaP layers grown by time-modulated PECVD

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electric power Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Materials

Jean-Paul KLEIDER  : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01801312

Submitted on : Monday, May 28, 2018-1:39:18 PM

Last modification on : Thursday, October 6, 2022-10:35:48 AM

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hal-01801312 , version 1 (28-05-2018)

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  • HAL Id : hal-01801312 , version 1

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Artem Baranov, I.A. Morozov, A.V. Uvarov, G. E. Yakovlev, Jean-Paul Kleider. Silicon doping of GaP layers grown by time-modulated PECVD. Saint-Petersburg OPEN 2018, 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Apr 2018, Saint-Pétersbourg, Russia. ⟨hal-01801312⟩

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UPMC CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GS-ENGINEERING INSTITUT-SCIENCES-LUMIERE
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