 |
Poster communications
Silicon doping of GaP layers grown by time-modulated PECVD
Artem Baranov 1, 2
Author
I.A. Morozov 1
Author
A.V. Uvarov 1
Author
G. E. Yakovlev
Author Employer institution : Saint Petersburg Academic University
Jean-Paul Kleider 2
Author IdHAL : jean-paul-kleider ORCID : https://orcid.org/0000-0003-4388-6326
2
GeePs - Laboratoire Génie électrique et électronique de Paris (11, rue Joliot Curie
Plateau de Moulon
91192 Gif sur Yvette - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8507 (France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- UPMC - Université Pierre et Marie Curie - Paris 6 (4 place Jussieu - 75005 Paris - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
Document type :
Poster communications
Domain :
Complete list of metadata
https://hal-centralesupelec.archives-ouvertes.fr/hal-01801312
Contributor : Jean-Paul Kleider <>
Submitted on : Monday, May 28, 2018 - 1:39:18 PM
Last modification on : Wednesday, September 16, 2020 - 5:51:20 PM
Contributor : Jean-Paul Kleider <>
Submitted on : Monday, May 28, 2018 - 1:39:18 PM
Last modification on : Wednesday, September 16, 2020 - 5:51:20 PM
Identifiers
- HAL Id : hal-01801312, version 1
Collections
CENTRALESUPELEC | UPMC | GEEPS | PHEMADIC | CNRS | SORBONNE-UNIVERSITE | SU-SCIENCES
Citation
Artem Baranov, I.A. Morozov, A.V. Uvarov, G. E. Yakovlev, Jean-Paul Kleider. Silicon doping of GaP layers grown by time-modulated PECVD. Saint-Petersburg OPEN 2018, 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Apr 2018, Saint-Pétersbourg, Russia. ⟨hal-01801312⟩
Metrics
Record views