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https://hal-centralesupelec.archives-ouvertes.fr/hal-01801326
Submitted on : Monday, May 28, 2018-1:48:06 PM
Last modification on : Friday, March 24, 2023-2:53:07 PM
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- HAL Id : hal-01801326 , version 1
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Audrey Morisset, Raphaël Cabal, Béatrice Grange, Clément Marchat, J Alvarez, et al.. Improvement of the Electrical and Passivating Properties of PECVD Boron doped Poly-silicon on Oxide. Silicon PV 2018, Mar 2018, Lausanne, Switzerland. ⟨hal-01801326⟩
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