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Poster communications

Improvement of the Electrical and Passivating Properties of PECVD Boron doped Poly-silicon on Oxide

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01801326
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Monday, May 28, 2018 - 1:48:06 PM
Last modification on : Tuesday, January 4, 2022 - 4:46:56 AM

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  • HAL Id : hal-01801326, version 1

Citation

Audrey Morisset, Raphaël Cabal, Béatrice Grange, Clément Marchat, J Alvarez, et al.. Improvement of the Electrical and Passivating Properties of PECVD Boron doped Poly-silicon on Oxide. Silicon PV 2018, Mar 2018, Lausanne, Switzerland. ⟨hal-01801326⟩

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