Improvement of the Electrical and Passivating Properties of PECVD Boron doped Poly-silicon on Oxide - Archive ouverte HAL Access content directly
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Improvement of the Electrical and Passivating Properties of PECVD Boron doped Poly-silicon on Oxide

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hal-01801326 , version 1 (28-05-2018)

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  • HAL Id : hal-01801326 , version 1

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Audrey Morisset, Raphaël Cabal, Béatrice Grange, Clément Marchat, J Alvarez, et al.. Improvement of the Electrical and Passivating Properties of PECVD Boron doped Poly-silicon on Oxide. Silicon PV 2018, Mar 2018, Lausanne, Switzerland. ⟨hal-01801326⟩
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