Improvement of the Electrical and Passivating Properties of PECVD Boron doped Poly-silicon on Oxide

Audrey Morisset (1, 2) , Raphaël Cabal (2) , Béatrice Grange (3) , Clément Marchat (4, 1) , J Alvarez (1) , Marie-Estelle Gueunier-Farret (1) , Sebastien Dubois (2) , Jean-Paul Kleider (1)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 INES - Institut National de L'Energie Solaire
3 DTS - Département des Technologies Solaires
4 IPVF - Institut Photovoltaïque d’Ile-de-France (ITE)

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Materials

Audrey Morisset, Raphaël Cabal, Béatrice Grange, Clément Marchat, J Alvarez, et al.. Improvement of the Electrical and Passivating Properties of PECVD Boron doped Poly-silicon on Oxide. Silicon PV 2018, Mar 2018, Lausanne, Switzerland. ⟨hal-01801326⟩