Conductivity and surface passivation properties of boron-doped poly-silicon passivated contacts for crystalline silicon solar cells - Archive ouverte HAL Access content directly
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Conductivity and surface passivation properties of boron-doped poly-silicon passivated contacts for crystalline silicon solar cells

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hal-01801442 , version 1 (28-05-2018)

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  • HAL Id : hal-01801442 , version 1

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Audrey Morisset, Béatrice Grange, Raphaël Cabal, Clément Marchat, J Alvarez, et al.. Conductivity and surface passivation properties of boron-doped poly-silicon passivated contacts for crystalline silicon solar cells. EMRS Spring Meeting 2018, Jun 2018, Strasbourg, France. ⟨hal-01801442⟩
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