Investigation of trap states in Gallium Phosphide / Silicon heterojunction devices from capacitance techniques

Médéric Descazeaux; Delfina Munoz; Arouna Darga; Jean-Paul Kleider

Investigation of trap states in Gallium Phosphide / Silicon heterojunction devices from capacitance techniques

Médéric Descazeaux ¹ Delfina Munoz ² Arouna Darga ³ Jean-Paul Kleider ³

1 INES - Institut National de L'Energie Solaire

2 DTS - Département des Technologies Solaires

3 GeePs - Laboratoire Génie électrique et électronique de Paris

Document type :

Poster communications

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Electric power

Engineering Sciences [physics] / Optics / Photonic

Engineering Sciences [physics] / Materials

Complete list of metadatas

https://hal-centralesupelec.archives-ouvertes.fr/hal-01801510
Contributor : Jean-Paul Kleider <>
Submitted on : Monday, May 28, 2018 - 2:53:00 PM
Last modification on : Thursday, September 12, 2019 - 5:16:02 PM

Investigation of trap states in Gallium Phosphide / Silicon heterojunction devices from capacitance techniques

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Investigation of trap states in Gallium Phosphide / Silicon heterojunction devices from capacitance techniques

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