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Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxide

Abstract : Passivating contacts of crystalline silicon (c-Si) solar cells with a poly-silicon layer (poly-Si) on a thin siliconoxide (SiOx) film offer an interesting approach to decrease the recombination current at the metal/c-Si interface and toincrease the cell efficiency. This study focuses on the development of boron-doped poly-Si layers deposited by PlasmaEnhanced Chemical Vapour Deposition (PECVD) on top of a thin silicon oxide film. First, the deposition and annealingconditions were optimised in order to: (1) reduce the blistering of the poly-Si on the thin SiOx film and (2) improve thepoly-Si conductivity. The passivation properties of the resulting structures have been shown to depend on the blister densityand have been improved through a hydrogenation step leading to a maximum implied open-circuit voltage value of 721 mV.
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01943223
Contributor : Marie Gueunier-Farret <>
Submitted on : Monday, December 3, 2018 - 4:32:16 PM
Last modification on : Thursday, September 17, 2020 - 12:26:02 PM

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Audrey Morisset, Raphaël Cabal, Bernadette Grange, Clément Marchat, Jose Alvarez, et al.. Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxide. Silicon PV 2018, Mar 2018, Lausanne, Switzerland. pp.040017, ⟨10.1063/1.5049280⟩. ⟨hal-01943223⟩

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