 |
Conference papers
Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxide
Abstract : Passivating contacts of crystalline silicon (c-Si) solar cells with a poly-silicon layer (poly-Si) on a thin siliconoxide (SiOx) film offer an interesting approach to decrease the recombination current at the metal/c-Si interface and toincrease the cell efficiency. This study focuses on the development of boron-doped poly-Si layers deposited by PlasmaEnhanced Chemical Vapour Deposition (PECVD) on top of a thin silicon oxide film. First, the deposition and annealingconditions were optimised in order to: (1) reduce the blistering of the poly-Si on the thin SiOx film and (2) improve thepoly-Si conductivity. The passivation properties of the resulting structures have been shown to depend on the blister densityand have been improved through a hydrogenation step leading to a maximum implied open-circuit voltage value of 721 mV.
https://hal-centralesupelec.archives-ouvertes.fr/hal-01943223
Contributor : Marie Gueunier-Farret Connect in order to contact the contributor
Submitted on : Monday, December 3, 2018 - 4:32:16 PM
Last modification on : Tuesday, January 4, 2022 - 4:47:37 AM
Contributor : Marie Gueunier-Farret Connect in order to contact the contributor
Submitted on : Monday, December 3, 2018 - 4:32:16 PM
Last modification on : Tuesday, January 4, 2022 - 4:47:37 AM
Links full text
