Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxide

Audrey Morisset (1, 2, 3) , Raphaël Cabal (2) , Bernadette Grange (2) , Clément Marchat (3, 1) , Jose Alvarez (1, 3) , Marie-Estelle Gueunier-Farret (1, 3) , Sébastien Dubois (2) , Jean-Paul Kleider (1, 3)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 INES - Institut National de L'Energie Solaire
3 IPVF - Institut Photovoltaïque d’Ile-de-France (ITE)

Passivating contacts of crystalline silicon (c-Si) solar cells with a poly-silicon layer (poly-Si) on a thin siliconoxide (SiOx) film offer an interesting approach to decrease the recombination current at the metal/c-Si interface and toincrease the cell efficiency. This study focuses on the development of boron-doped poly-Si layers deposited by PlasmaEnhanced Chemical Vapour Deposition (PECVD) on top of a thin silicon oxide film. First, the deposition and annealingconditions were optimised in order to: (1) reduce the blistering of the poly-Si on the thin SiOx film and (2) improve thepoly-Si conductivity. The passivation properties of the resulting structures have been shown to depend on the blister densityand have been improved through a hydrogenation step leading to a maximum implied open-circuit voltage value of 721 mV.

Domains: Engineering Sciences [physics]; Materials; Physics [physics]; Physics [physics]; General Physics [physics.gen-ph]

Audrey Morisset, Raphaël Cabal, Bernadette Grange, Clément Marchat, Jose Alvarez, et al.. Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxide. Silicon PV 2018, Mar 2018, Lausanne, Switzerland. pp.040017, ⟨10.1063/1.5049280⟩. ⟨hal-01943223⟩