Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition

Guénaëlle Hamon (1) , Nicolas Vaissiere Vaissière (2) , Romain Cariou (2, 3) , Wanghua Chen (2) , J Alvarez (4) , Jean-Luc Maurice (2) , Jean Decobert (5) , Jean-Paul Kleider (4) , Pere Roca I Cabarrocas Roca I Cabarrocas (2)

1 Total S.A. Renewables
2 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
3 III-V Lab - Alcatel-Thales III-V Lab
4 GeePs - Laboratoire Génie électrique et électronique de Paris
5 III-V Lab - Alcatel-Thalès III-V lab

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Materials

Guénaëlle Hamon, Nicolas Vaissiere Vaissière, Romain Cariou, Wanghua Chen, J Alvarez, et al.. Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition. Journées Nationales du PhotoVoltaïque (JNPV) 2018, Dec 2018, Dourdan, France. ⟨hal-01943466⟩