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Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition

Guénaëlle Hamon 1 Nicolas Vaissiere Vaissière 2 Romain Cariou 2, 3 Wanghua Chen 2 J Alvarez 4 Jean-Luc Maurice 2 Jean Decobert 5 Jean-Paul Kleider 4 Pere Roca I Cabarrocas Roca I Cabarrocas 2 
1 Total S.A. Renewables
2 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
3 III-V Lab - Alcatel-Thales III-V Lab
4 GeePs - Laboratoire Génie électrique et électronique de Paris
5 III-V Lab - Alcatel-Thalès III-V lab
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01943466
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Monday, December 3, 2018 - 6:24:50 PM
Last modification on : Saturday, June 25, 2022 - 10:34:39 PM

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  • HAL Id : hal-01943466, version 1

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X | CNRS | X-PICM | X-DEP-PHYS | LPICM | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | ANR | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Guénaëlle Hamon, Nicolas Vaissiere Vaissière, Romain Cariou, Wanghua Chen, J Alvarez, et al.. Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition. Journées Nationales du PhotoVoltaïque (JNPV) 2018, Dec 2018, Dourdan, France. ⟨hal-01943466⟩

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