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Low-temperature relaxor state induced by epitaxial compression in PbSc0.5Nb0.5O3 films

Abstract : The use of high-performance perovskite-structure epitaxial relaxor ferroelectric films [S. H. Baek et al., Science 334, 958 (2011)] is hindered by the lack of knowledge of epitaxial effects therein. It is experimentally shown here that a biaxial epitaxial compression can favor the relaxor state over ferroelectricity. The absence of the ferroelectric transition and the existence of the low-temperature relaxor state are evidenced by a combination of x-ray diffraction, dielectric, polarization, and optical studies of PbSc0.5Nb0.5O3 films epitaxially grown on La0.5Sr0.5CoO3/MgO(001). This finding is beyond existing models of polarization in perovskite-structure epitaxial films and beyond the established ability to induce ferroelectricity by an epitaxial strain.
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https://hal-centralesupelec.archives-ouvertes.fr/hal-02186457
Contributor : Amandine Lustrement <>
Submitted on : Wednesday, July 17, 2019 - 12:21:45 PM
Last modification on : Wednesday, July 1, 2020 - 4:22:03 PM

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M. Tyunina, J. Levoska, P.-E. Janolin, A. Dejneka. Low-temperature relaxor state induced by epitaxial compression in PbSc0.5Nb0.5O3 films. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2013, 87 (22), ⟨10.1103/PhysRevB.87.224107⟩. ⟨hal-02186457⟩

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