Temperature-Aware gm/ID-based Methodology for Active Inductor Design

João R. Raposo de O. Martins (1) , Emilie Avignon-Meseldzija (1) , Pietro Maris Ferreira (1)

1 GeePs - Laboratoire Génie électrique et électronique de Paris

Active inductors have become standard building blocks for many applications by its recon gurability and reduced silicon area. However, the inductance variation over temperature is a main circuits' limitation in harsh environments. This paper presents a novel temperature analysis of a general architecture of active inductors, obtaining an optimal conductance value to minimize inductance variation over temperature. Based on the m /I D and sensitivity analysis, temperature variation result highlights that, even if its counter intuitive to bias transistors in weak inversion, a low inductance variation of 139 ppm/ °C.

Keywords: harsh environment; active inductors; gm/ID methodology; temperature-aware

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electronics

João R. Raposo de O. Martins, Emilie Avignon-Meseldzija, Pietro Maris Ferreira. Temperature-Aware gm/ID-based Methodology for Active Inductor Design. Workshop on Circuits and System Design, Aug 2019, São Paulo, Brazil. ⟨hal-02268794⟩