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Temperature-Aware gm/ID-based Methodology for Active Inductor Design

Abstract : Active inductors have become standard building blocks for many applications by its recon gurability and reduced silicon area. However, the inductance variation over temperature is a main circuits' limitation in harsh environments. This paper presents a novel temperature analysis of a general architecture of active inductors, obtaining an optimal conductance value to minimize inductance variation over temperature. Based on the m /I D and sensitivity analysis, temperature variation result highlights that, even if its counter intuitive to bias transistors in weak inversion, a low inductance variation of 139 ppm/ °C.
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Contributor : Pietro Maris Ferreira Connect in order to contact the contributor
Submitted on : Monday, September 23, 2019 - 5:53:44 PM
Last modification on : Saturday, June 25, 2022 - 10:39:43 PM
Long-term archiving on: : Sunday, February 9, 2020 - 8:33:00 AM


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  • HAL Id : hal-02268794, version 1


João R. Raposo de O. Martins, Emilie Avignon-Meseldzija, Pietro Maris Ferreira. Temperature-Aware gm/ID-based Methodology for Active Inductor Design. Workshop on Circuits and System Design, Aug 2019, São Paulo, Brazil. ⟨hal-02268794⟩



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