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Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes

Abstract : In this work we studied 90 nm thick copolymer thin films of vinylidene fluoride (70%) with trifluoroethylene (30%) grown by Langmuir-Blodgett onto silicon substrates. The effects of two different bottom electrodes, namely, Al and LaNiO3 (LNO) are investigated. A Debye-like relaxation near 320 K is enlarged by LNO bottom electrode. X-ray diffraction pattern attests that two different crystallographic structures coexist below 340 K in film deposited on LNO. Compared with Al electrode, LNO electrode strongly increases defects or gauche segments in film and further weakens properties of film. © 2009 American Institute of Physics.
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https://hal-centralesupelec.archives-ouvertes.fr/hal-02269647
Contributor : Amandine Lustrement <>
Submitted on : Friday, August 23, 2019 - 10:34:00 AM
Last modification on : Wednesday, September 16, 2020 - 4:50:00 PM

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P.F. Liu, P. Gemeiner, H. Shen, X.J. Meng, J.H. Chu, et al.. Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes. Journal of Applied Physics, American Institute of Physics, 2009, 106 (5), pp.054111. ⟨10.1063/1.3212973⟩. ⟨hal-02269647⟩

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