Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes

P.F. Liu (1, 2) , P. Gemeiner (1) , H. Shen (2) , X.J. Meng (2) , J.H. Chu (2) , S. Geiger (1, 3) , N. Guiblin (1) , B. Dkhil (1)

1 SPMS - Laboratoire Structures, Propriétés et Modélisation des solides
2 National Laboratory for Infrared Physics
3 PCPB - Physico-chimie, pharmacotechnie, biopharmacie

In this work we studied 90 nm thick copolymer thin films of vinylidene fluoride (70%) with trifluoroethylene (30%) grown by Langmuir-Blodgett onto silicon substrates. The effects of two different bottom electrodes, namely, Al and LaNiO3 (LNO) are investigated. A Debye-like relaxation near 320 K is enlarged by LNO bottom electrode. X-ray diffraction pattern attests that two different crystallographic structures coexist below 340 K in film deposited on LNO. Compared with Al electrode, LNO electrode strongly increases defects or gauche segments in film and further weakens properties of film. © 2009 American Institute of Physics.

Mots clés: Aluminum; Dielectric materials; Dielectric properties of solids; Electrodes; Ferroelectric films; Fluorine compounds; Langmuir Blodgett films; Lanthanum compounds; Nickel compounds; Thin film transistors; X ray diffraction; Copolymer thin films; Crystallographic structure; Debye-like relaxation; Langmuir-blodgett; Poly(vinylidene fluoride-trifluoroethylene); Silicon substrates; Trifluoroethylene; Vinylidene fluoride; Thin films

Domaines: Matériaux

P.F. Liu, P. Gemeiner, H. Shen, X.J. Meng, J.H. Chu, et al.. Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes. Journal of Applied Physics, 2009, 106 (5), pp.054111. ⟨10.1063/1.3212973⟩. ⟨hal-02269647⟩