Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells

Denis Mencaraglia (1) , Charles Renard (2) , Nikolay Cherkashin (3) , G. Hallais (2) , Alexandre Jaffré (1) , J. Alvarez (1) , Guillaume Chau (1) , Laetitia Vincent (2) , Jean-Paul Kleider (1) , Frédéric Hamouda (2) , Daniel Bouchier (2)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 C2N (UMR_9001) - Centre de Nanosciences et Nanotechnologies
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

The monolithic integration on silicon of GaAs, and more generally of III-V semiconductors, is a very attractive and promising route for the production of high efficiencies multijunctions devices in the manner of those developed for space applications on germanium, but at a much lower cost suitable for terrestrial PV applications. The purpose of this paper is to present the building blocks we have developed for defect-free growth of GaAs on silicon for tandem solar cell applications. This will be addressed from the technological point of view as well as from design, modelling and characterization perspectives. Preliminary work has allowed the identification of critical technological bottlenecks, following which solution routes have been developed as will be presented and discussed. The resulting design for a GaAs/Si tandem solar cell will then be described..

Mots clés: Epitaxy; III-V Semiconductors; Silicon; Multijunction Solar Cell

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique; Energie électrique; Optique / photonique; Matériaux

Denis Mencaraglia, Charles Renard, Nikolay Cherkashin, G. Hallais, Alexandre Jaffré, et al.. Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells. 36th European Photovoltaic Solar Energy Conference and Exhibition, WIP, Sep 2019, Marseille, France. pp.757, ⟨10.4229/EUPVSEC20192019-3BV.2.49⟩. ⟨hal-02343896⟩