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Conference papers
C-AFM and KPFM Characterization of poly-Si/SiOx/c-Si Passivated Contact Structure
Abstract : Poly-Si/SiOx/c-Si structures were characterized using conductive AFM (C-AFM) and Kelvin Probe Force Microscopy (KPFM) techniques with the objective to provide a better understanding of the structure, and notably the presence of nanoholes in the oxide. The observed samples include highly doped poly-Si layers annealed at different temperatures (700, 800 and 900 °C) and also intrinsic poly-Si layers. The latter layers have been in particular implemented to facilitate C-AFM and KPFM correlative analysis on the same scan areas. It is found that the C-AFM technique is not conclusive due to the high doping and surface morphology of the poly-Si layer. On the other hand KPFM allows to observe local surface potential drops that may be correlated to holes in the oxide. Correlative microscopy measurements applied on intrinsic poly-Si allowed to evidence links between C-AFM and KPFM observations, however surface conduction effects on c-AFM still remain.
Cited literature [10 references]
https://hal-centralesupelec.archives-ouvertes.fr/hal-02343908
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Wednesday, March 11, 2020 - 4:56:49 PM
Last modification on : Wednesday, September 8, 2021 - 6:07:25 PM
Long-term archiving on: : Friday, June 12, 2020 - 4:52:34 PM
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Wednesday, March 11, 2020 - 4:56:49 PM
Last modification on : Wednesday, September 8, 2021 - 6:07:25 PM
Long-term archiving on: : Friday, June 12, 2020 - 4:52:34 PM
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1AO.2.6_paper.pdf
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