Skip to Main content Skip to Navigation
Conference papers

C-AFM and KPFM Characterization of poly-Si/SiOx/c-Si Passivated Contact Structure

Abstract : Poly-Si/SiOx/c-Si structures were characterized using conductive AFM (C-AFM) and Kelvin Probe Force Microscopy (KPFM) techniques with the objective to provide a better understanding of the structure, and notably the presence of nanoholes in the oxide. The observed samples include highly doped poly-Si layers annealed at different temperatures (700, 800 and 900 °C) and also intrinsic poly-Si layers. The latter layers have been in particular implemented to facilitate C-AFM and KPFM correlative analysis on the same scan areas. It is found that the C-AFM technique is not conclusive due to the high doping and surface morphology of the poly-Si layer. On the other hand KPFM allows to observe local surface potential drops that may be correlated to holes in the oxide. Correlative microscopy measurements applied on intrinsic poly-Si allowed to evidence links between C-AFM and KPFM observations, however surface conduction effects on c-AFM still remain.
Complete list of metadata

Cited literature [10 references]  Display  Hide  Download
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Wednesday, March 11, 2020 - 4:56:49 PM
Last modification on : Sunday, June 26, 2022 - 2:47:49 AM
Long-term archiving on: : Friday, June 12, 2020 - 4:52:34 PM


Publisher files allowed on an open archive



Clément Marchat, Audrey Morisset, J. Alvarez, Raphaël Cabal, M.E. Gueunier-Farret, et al.. C-AFM and KPFM Characterization of poly-Si/SiOx/c-Si Passivated Contact Structure. 36th European Photovoltaic Solar Energy Conference and Exhibition, WIP, Sep 2019, Marseille, France. pp.22, ⟨10.4229/EUPVSEC20192019-1AO.2.6⟩. ⟨hal-02343908⟩



Record views


Files downloads