Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition - Archive ouverte HAL Access content directly
Conference Poster Year :

Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

(1) , (1) , (1) , (1) , (1) , (2)
1
2
Not file

Dates and versions

hal-02344022 , version 1 (03-11-2019)

Identifiers

  • HAL Id : hal-02344022 , version 1

Cite

Alexander S. Gudovskikh, Artem Baranov, Ivan Morozov, A. Uvarov, Dmitriy A. Kudryashov, et al.. Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344022⟩
29 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More