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Poster communications
Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition
Alexander S. Gudovskikh
1
Artem Baranov
1
Ivan Morozov
1
A. Uvarov
1
Dmitriy A. Kudryashov
1
Jean-Paul Kleider
2
Dmitriy A. Kudryashov 1
Author
Jean-Paul Kleider 2
Author IdHAL : jean-paul-kleider ORCID : https://orcid.org/0000-0003-4388-6326
2
GeePs - Laboratoire Génie électrique et électronique de Paris (11, rue Joliot Curie
Plateau de Moulon
91192 Gif sur Yvette - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- SU - Sorbonne Université (21 rue de l’École de médecine - 75006 Paris - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8507 (France)
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344022
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, November 3, 2019 - 6:57:57 PM
Last modification on : Thursday, September 17, 2020 - 12:26:02 PM
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, November 3, 2019 - 6:57:57 PM
Last modification on : Thursday, September 17, 2020 - 12:26:02 PM
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- HAL Id : hal-02344022, version 1
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Citation
Alexander S. Gudovskikh, Artem Baranov, Ivan Morozov, A. Uvarov, Dmitriy A. Kudryashov, et al.. Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344022⟩
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