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Poster communications

Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344022
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Sunday, November 3, 2019 - 6:57:57 PM
Last modification on : Wednesday, September 8, 2021 - 6:07:28 PM

Identifiers

  • HAL Id : hal-02344022, version 1

Citation

Alexander S. Gudovskikh, Artem Baranov, Ivan Morozov, A. Uvarov, Dmitriy A. Kudryashov, et al.. Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344022⟩

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