Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition - CentraleSupélec Access content directly
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Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

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Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics Electric power Optics / Photonic Materials

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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344022

Submitted on : Sunday, November 3, 2019-6:57:57 PM

Last modification on : Friday, March 24, 2023-2:53:13 PM

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hal-02344022 , version 1 (03-11-2019)

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  • HAL Id : hal-02344022 , version 1

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Alexander S. Gudovskikh, Artem Baranov, Ivan Morozov, A. Uvarov, Dmitriy A. Kudryashov, et al.. Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344022⟩

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CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GS-ENGINEERING GS-PHYSIQUE INSTITUT-SCIENCES-LUMIERE
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