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Poster communications

Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

Alexander S. Gudovskikh 1 Artem Baranov 1 Ivan Morozov 1 A. Uvarov 1 Dmitriy A. Kudryashov 1 Jean-Paul Kleider 2 
1 Saint Petersburg Academic University
2 GeePs - Laboratoire Génie électrique et électronique de Paris
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344022
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Sunday, November 3, 2019 - 6:57:57 PM
Last modification on : Saturday, June 25, 2022 - 10:40:51 PM

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  • HAL Id : hal-02344022, version 1

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CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Alexander S. Gudovskikh, Artem Baranov, Ivan Morozov, A. Uvarov, Dmitriy A. Kudryashov, et al.. Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344022⟩

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