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Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electric power Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Materials

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Submitted on : Sunday, November 3, 2019-6:57:57 PM

Last modification on : Saturday, June 25, 2022-10:40:51 PM

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hal-02344022 , version 1 (03-11-2019)

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  • HAL Id : hal-02344022 , version 1

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Alexander S. Gudovskikh, Artem Baranov, Ivan Morozov, A. Uvarov, Dmitriy A. Kudryashov, et al.. Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344022⟩

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CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GS-ENGINEERING INSTITUT-SCIENCES-LUMIERE
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