Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition - CentraleSupélec Access content directly
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hal-02344022 , version 1 (03-11-2019)

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  • HAL Id : hal-02344022 , version 1

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Alexander S. Gudovskikh, Artem Baranov, Ivan Morozov, A. Uvarov, Dmitriy A. Kudryashov, et al.. Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344022⟩
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