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Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344022
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, November 3, 2019 - 6:57:57 PM
Last modification on : Thursday, September 17, 2020 - 12:26:02 PM

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  • HAL Id : hal-02344022, version 1

Citation

Alexander S. Gudovskikh, Artem Baranov, Ivan Morozov, A. Uvarov, Dmitriy A. Kudryashov, et al.. Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344022⟩

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