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Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance

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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344024
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, November 3, 2019 - 7:01:06 PM
Last modification on : Thursday, September 17, 2020 - 12:26:02 PM

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  • HAL Id : hal-02344024, version 1

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Alexandra Levtchenko, Sylvain Le Gall, Rudolf Brüggemann, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344024⟩

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