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Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates

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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344032
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, November 3, 2019 - 7:10:51 PM
Last modification on : Thursday, September 17, 2020 - 12:26:02 PM

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  • HAL Id : hal-02344032, version 1

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Cyril Léon, Sylvain Le Gall, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Pere Roca I Cabarrocas Roca I Cabarrocas. Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344032⟩

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