Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electric power Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Materials

Jean-Paul KLEIDER : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-02344032

Submitted on : Sunday, November 3, 2019-7:10:51 PM

Last modification on : Monday, October 17, 2022-1:33:18 PM

Dates and versions

hal-02344032 , version 1 (03-11-2019)

Identifiers

HAL Id : hal-02344032 , version 1

Cite

Cyril Léon, Sylvain Le Gall, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Pere Roca I Cabarrocas Roca I Cabarrocas. Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344032⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

X CNRS X-PICM X-DEP-PHYS LPICM CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES IP_PARIS GS-ENGINEERING INSTITUT-SCIENCES-LUMIERE

44 View

0 Download