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Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates

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Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics Electric power Optics / Photonic Materials

Jean-Paul KLEIDER  : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-02344032

Submitted on : Sunday, November 3, 2019-7:10:51 PM

Last modification on : Friday, March 24, 2023-2:53:13 PM

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hal-02344032 , version 1 (03-11-2019)

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  • HAL Id : hal-02344032 , version 1

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Cyril Léon, Sylvain Le Gall, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Pere Roca I Cabarrocas Roca I Cabarrocas. Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344032⟩

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