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Low Temperature p-n Junction Fabrication by PECVD for n-PERT Solar Cells: An Alternative to Boron Diffusion

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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344037
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, November 3, 2019 - 7:20:59 PM
Last modification on : Tuesday, September 22, 2020 - 3:38:40 AM

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  • HAL Id : hal-02344037, version 1

Citation

Marta Chrostowski, J Alvarez, Jean-Paul Kleider, K.-H. Kim, Etienne Drahi, et al.. Low Temperature p-n Junction Fabrication by PECVD for n-PERT Solar Cells: An Alternative to Boron Diffusion. 36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2019), Sep 2019, Marseille, France. ⟨hal-02344037⟩

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