Study of GaP nucleation layer grown on Si by PE-ALD

a S Gudovskikh (1, 2) , A.V. Uvarov (2) , I.A. Morozov (2) , Artem Baranov (2) , Kirill S. Zelentsov (2) , D. A. Kudryashov (2) , N.A. Kalyuzhnyy , S.A. Mintairov , Jean-Paul Kleider (3)

1 Saint Petersburg Electrotechnical University "LETI"
2 Saint Petersburg Academic University
3 GeePs - Laboratoire Génie électrique et électronique de Paris

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Materials

a S Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, Kirill S. Zelentsov, et al.. Study of GaP nucleation layer grown on Si by PE-ALD. E-MRS 2019 Spring Meeting, May 2019, Marseille, France. ⟨hal-02344049⟩