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Study of GaP nucleation layer grown on Si by PE-ALD

a S Gudovskikh 1, 2 A.V. Uvarov 2 I.A. Morozov 2 Artem Baranov 2 Kirill S. Zelentsov 2 D. A. Kudryashov 2 N.A. Kalyuzhnyy S.A. Mintairov Jean-Paul Kleider 3 
1 Saint Petersburg Electrotechnical University "LETI"
2 Saint Petersburg Academic University
3 GeePs - Laboratoire Génie électrique et électronique de Paris
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344049
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Sunday, November 3, 2019 - 7:45:24 PM
Last modification on : Saturday, June 25, 2022 - 10:40:51 PM

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  • HAL Id : hal-02344049, version 1

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CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

a S Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, Kirill S. Zelentsov, et al.. Study of GaP nucleation layer grown on Si by PE-ALD. E-MRS 2019 Spring Meeting, May 2019, Marseille, France. ⟨hal-02344049⟩

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