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Study of GaP nucleation layer grown on Si by PE-ALD

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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344049
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, November 3, 2019 - 7:45:24 PM
Last modification on : Thursday, September 17, 2020 - 12:26:02 PM

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  • HAL Id : hal-02344049, version 1

Citation

a S Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, Kirill S. Zelentsov, et al.. Study of GaP nucleation layer grown on Si by PE-ALD. E-MRS 2019 Spring Meeting, May 2019, Marseille, France. ⟨hal-02344049⟩

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