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Conference papers
Study of GaP nucleation layer grown on Si by PE-ALD
a S Gudovskikh
1, 2
A.V. Uvarov
2
I.A. Morozov
2
Artem Baranov
2
Kirill S. Zelentsov
2
D. A. Kudryashov
2
N.A. Kalyuzhnyy
S.A. Mintairov
Jean-Paul Kleider
3
Jean-Paul Kleider 3
Author IdHAL : jean-paul-kleider ORCID : https://orcid.org/0000-0003-4388-6326
1
Saint Petersburg Electrotechnical University "LETI" (Professora Popova Str. 5 Saint Petersburg Russia - Russia)
3
GeePs - Laboratoire Génie électrique et électronique de Paris (11, rue Joliot Curie
Plateau de Moulon
91192 Gif sur Yvette - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- SU - Sorbonne Université (21 rue de l’École de médecine - 75006 Paris - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8507 (France)
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-02344049
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Sunday, November 3, 2019 - 7:45:24 PM
Last modification on : Wednesday, September 8, 2021 - 6:07:22 PM
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Sunday, November 3, 2019 - 7:45:24 PM
Last modification on : Wednesday, September 8, 2021 - 6:07:22 PM
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- HAL Id : hal-02344049, version 1
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Citation
a S Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, Kirill S. Zelentsov, et al.. Study of GaP nucleation layer grown on Si by PE-ALD. E-MRS 2019 Spring Meeting, May 2019, Marseille, France. ⟨hal-02344049⟩
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