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Study of GaP nucleation layer grown on Si by PE-ALD

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hal-02344049 , version 1 (03-11-2019)

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  • HAL Id : hal-02344049 , version 1

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a S Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, Kirill S. Zelentsov, et al.. Study of GaP nucleation layer grown on Si by PE-ALD. E-MRS 2019 Spring Meeting, May 2019, Marseille, France. ⟨hal-02344049⟩
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