Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications

G. Hamon (1, 2) , N. Paillet (3) , J Alvarez (4) , A. Larrue (3) , J. Decobert (3)

1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 TOTAL S.A.
3 III-V Lab - Alcatel-Thalès III-V lab
4 GeePs - Laboratoire Génie électrique et électronique de Paris

In this work, we have investigated the growth of highly n-doped gallium arsenide (GaAs) and gallium indium phosphide (GaInP) with tellurium (Te) by metal organic vapor phase epitaxy (MOVPE) using diisopropyl telluride (DIPTe), aiming at fabricating high performances tunnel junctions. A parametric study is performed in order to optimize the n++-type doping. Concentrations above 2.7 × 1019 cm−3 were achieved in both GaAs and GaInP layers. Using these Te-doped layers, we fabricated both n on p (n/p) and p on n (p/n) tunnel junctions. The p/n tunnel junction required additional annealing steps during growth, due to memory effect and surfactant properties of Te. We characterized GaAs/GaAs, GaAs/AlGaAs and AlGaAs/GaInP tunnel junctions with peak tunneling current densities as high as 250, 3000 and 1500 A/cm2 respectively. These tunnel junction performances are suitable for multijunction solar cells operating under high concentration. © 2018

Mots clés: A1. Doping; A2. Metalorganic vapor phase epitaxy; B1. Semiconducting gallium arsenide; B3. Multijunction solar cells

Domaines: Sciences de l'ingénieur [physics]

G. Hamon, N. Paillet, J Alvarez, A. Larrue, J. Decobert. Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications. Journal of Crystal Growth, 2018, 498, pp.301-306. ⟨10.1016/j.jcrysgro.2018.07.003⟩. ⟨hal-02381424⟩