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Study of GaP/Si Heterojunction Solar Cells

Abstract : The GaP/Si heterojunctions fabricated by molecular beam epitaxy (MBE) and plasma enhanced atomic layer deposition (PE-ALD) were studied. The degradation of charge carrier lifetime in Si was observed during the growth of single-crystalline GaP layer on Si substrates by MBE at 500-600 °C. The study performed by PL and DLTS has demonstrated the presence of the defective layer in Si, which is located within ~30 nm near to the GaP/Si interface. This defective layer leads to significant reduction of solar cell performance for anisotype n-GaP/p-Si heterojunction due to strong recombination in the space charge region. The GaP/Si heterostructure with Si n-p homojunction exhibits better performance compared to the anisotype n-GaP/p-Si heterojunction because the defective layer is located in the n-Si emitter formed by intentional P diffusion. On the contrary, the deposition of amorphous GaP layer by PE-ALD at T < 380 °C does not lead to the degradation of Si wafer charge carrier lifetime.
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https://hal-centralesupelec.archives-ouvertes.fr/hal-02404639
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Submitted on : Wednesday, March 11, 2020 - 3:09:31 PM
Last modification on : Wednesday, September 16, 2020 - 5:52:00 PM
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A.S. Gudovskikh, K.S. Zelentsov, A.I. Baranov, D.A. Kudryashov, I.A. Morozov, et al.. Study of GaP/Si Heterojunction Solar Cells. Energy Procedia, Elsevier, 2016, 102, pp.56-63. ⟨10.1016/j.egypro.2016.11.318⟩. ⟨hal-02404639⟩

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