Optoelectronics properties of TiO2Cu thin films obtained by sol gel method

Zineb Essalhi (1) , Bouchaib Hartiti (1) , Abderrazak Lfakir (2) , Bernabé Mari Soucase (3) , Philippe Thevenin (4)

1 UH2MC - Université Hassan II [Casablanca]
2 USMS - Université Sultan Moulay Slimane
3 UPV - Universitat Politècnica de València = Universitad Politecnica de Valencia = Polytechnic University of Valencia
4 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

In this research, Cu-doped TiO2 thin films have been successfully deposited onto a glass substrate by Sol–gel technique using dip coating method. The films were annealed at different annealing temperatures (400–500 °C) for 1 h. The structural, optical and electrical properties of the films were investigated and compared using X-ray Diffraction, UV–visible spectrophotometer and 4-point probe method. Optical analysis by mean transmittance T(λ) and absorption A(λ) measurements in the wavelength range between 300 to 800 nm allow us to determine the indirect band gap energy. DRX analysis of our thin films of TiO2Cu shows that the intensities of the line characteristic of anatase phase increasing in function of the temperature. © 2017, Springer Science+Business Media, LLC.

Mots clés: Anatase; Cu-doped TiO2; Dip coating; Optical properties

Domaines: Sciences de l'ingénieur [physics]

Zineb Essalhi, Bouchaib Hartiti, Abderrazak Lfakir, Bernabé Mari Soucase, Philippe Thevenin. Optoelectronics properties of TiO2Cu thin films obtained by sol gel method. Optical and Quantum Electronics, 2017, 49 (9), pp.301. ⟨10.1007/s11082-017-1142-0⟩. ⟨hal-02434078⟩