Characteristics of CuInS2 thin films synthesizes by chemical spray pyrolysis

Ahmed Kotbi (1, 2) , Bouchaib Hartiti (2) , Abderraouf Ridah (1) , Philippe Thevenin (3)

1 LIMAT - Laboratoire d'Ingénierie et Matériaux [Casablanca]
2 MAC & PM Laboratory, ANEPMAER Group, FSTM
3 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

CuInS2 multi-component semiconductors thin films were prepared by chemical spray pyrolysis at different deposition conditions. The structural, optical, and electrical properties of the films were investigated. Samples were characterized using Raman spectroscopy, spectrophotometric and the 4-point probe method. Raman spectra indicate that the sprayed thin films are grown only with CH-ordering. Optical analysis by means of transmittance T(λ) and absorption A(λ) measurements in the wavelength range between 550 and 850 nm allow us to determine the direct band gap energy. Resistivity studies of the samples revealed that HK-S1 was less resistive than the other samples.

Keywords: Transmittance; Thin films; Raman spectroscopy; CuInS2; Spray pyrolysis; Spectrophotometric; Absorption measurements

Domains: Engineering Sciences [physics]

Ahmed Kotbi, Bouchaib Hartiti, Abderraouf Ridah, Philippe Thevenin. Characteristics of CuInS2 thin films synthesizes by chemical spray pyrolysis. Optical and Quantum Electronics, 2016, 48 (1), pp.1-9. ⟨10.1007/s11082-015-0344-6⟩. ⟨hal-02434093⟩