Structural and optical properties of CuIn1-xGaxS2 absorber layer for solar cells synthesized by spray pyrolysis

Mohammed Rafi (1) , Ahmed Ziti (1) , Soucace Bernabé Mari (2) , Bouchaib Hartiti (1) , Abderraouf Ridah (3) , Philippe Thevenin (4)

1 MAC& PM Laboratory, ANEPMAER Group, Department of Physics, FSTM, University Hassan II Mohammedia Casablanca
2 Departamento de Física Aplicada [Universitat Politècnica de València]
3 USMS - Université Sultan Moulay Slimane
4 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

In this study, we investigated the effect of the chemical ratios (x=Ga/In+Ga) on the structural and optical properties of the chalcopyrite Cu(Inx-1, Gax)S2 thin films made by spray pyrolysis. Structural analysis by X-ray diffraction revealed that the CIGS crystallizes in a polycrystalline structure with chalcopyrite phase and a preferential growth orientation [112]. The best crystallinity was observed for the film prepared with the chemical ratio x = 0.9. The grain size of the films of CIGS decreases with chemical ratio (Ga+In)/Ga increases. The Optical properties was calculate from the measured spectral transmittance Tλ and reflectance Rλ allow us to determine the direct band gap energy value which increases by increasing the x ratios and it is in the range 1.64-1.70 eV, indicating that Cu(In1-xGax)S2 compound has an absorbing property favorable for photovoltaic applications. © 2016 IEEE.

Keywords: Gax)S2; Cu(Inx-1; Optical properties; Solar cell; Thin films; Spray pyrolysis

Domains: Engineering Sciences [physics]

Mohammed Rafi, Ahmed Ziti, Soucace Bernabé Mari, Bouchaib Hartiti, Abderraouf Ridah, et al.. Structural and optical properties of CuIn1-xGaxS2 absorber layer for solar cells synthesized by spray pyrolysis. 2016 International Renewable and Sustainable Energy Conference, IRSEC 2016, Nov 2016, Marrakech, Morocco. pp.34-37, ⟨10.1109/IRSEC.2016.7984078⟩. ⟨hal-02434095⟩