Structural and optical properties of CuIn1-xGaxS2 absorber layer for solar cells synthesized by spray pyrolysis - Archive ouverte HAL Access content directly
Conference Papers Year : 2017

Structural and optical properties of CuIn1-xGaxS2 absorber layer for solar cells synthesized by spray pyrolysis

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Abstract

In this study, we investigated the effect of the chemical ratios (x=Ga/In+Ga) on the structural and optical properties of the chalcopyrite Cu(Inx-1, Gax)S2 thin films made by spray pyrolysis. Structural analysis by X-ray diffraction revealed that the CIGS crystallizes in a polycrystalline structure with chalcopyrite phase and a preferential growth orientation [112]. The best crystallinity was observed for the film prepared with the chemical ratio x = 0.9. The grain size of the films of CIGS decreases with chemical ratio (Ga+In)/Ga increases. The Optical properties was calculate from the measured spectral transmittance Tλ and reflectance Rλ allow us to determine the direct band gap energy value which increases by increasing the x ratios and it is in the range 1.64-1.70 eV, indicating that Cu(In1-xGax)S2 compound has an absorbing property favorable for photovoltaic applications. © 2016 IEEE.
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hal-02434095 , version 1 (09-01-2020)

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Mohammed Rafi, Ahmed Ziti, Soucace Bernabé Mari, Bouchaib Hartiti, Abderraouf Ridah, et al.. Structural and optical properties of CuIn1-xGaxS2 absorber layer for solar cells synthesized by spray pyrolysis. 2016 International Renewable and Sustainable Energy Conference, IRSEC 2016, Nov 2016, Marrakech, Morocco. pp.34-37, ⟨10.1109/IRSEC.2016.7984078⟩. ⟨hal-02434095⟩
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