Electrical characterization of PA-MBE grown GaN nanowires via conductive probe AFM - Effect of load and generator resistances - Archive ouverte HAL Access content directly
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Electrical characterization of PA-MBE grown GaN nanowires via conductive probe AFM - Effect of load and generator resistances

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hal-03844452 , version 1 (08-11-2022)

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  • HAL Id : hal-03844452 , version 1

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Tanbir Sodhi, Pascal Chrétien, Laurent Travers, Frédéric Houzé, Noëlle Gogneau. Electrical characterization of PA-MBE grown GaN nanowires via conductive probe AFM - Effect of load and generator resistances. Summer School of the GDR-PULSE network, Jul 2021, Porquerolles, France. ⟨hal-03844452⟩
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