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Journal Articles Journal of Non-Crystalline Solids Year : 2008

Device grade hydrogenated polymorphous silicon deposited at high rates

Yrebegnan Moussa Soro
  • Function : Author
Laboratoire de génie électrique de Paris
A. Abramov
  • Function : Author
Marie-Estelle Gueunier-Farret
Laboratoire de génie électrique de Paris
CV
E.V. Johnson
CV
Christophe Longeaud
Laboratoire de génie électrique de Paris
Pere Roca I Cabarrocas
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00350767

Submitted on : Wednesday, January 7, 2009-4:06:49 PM

Last modification on : Friday, March 24, 2023-2:52:51 PM

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hal-00350767 , version 1 (07-01-2009)

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  • HAL Id : hal-00350767 , version 1

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Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. Journal of Non-Crystalline Solids, 2008, 354, pp.2092. ⟨hal-00350767⟩

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SUPELEC UPMC EC-PARIS CNRS SUP_LGEP CENTRALESUPELEC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE
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