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Conference Papers Year : 2008

Study of GaInP heterojunction solar cell interface properties by admittance spectroscopy

A.S. Gudovskikh
  • Function : Author
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV
Rémy Chouffot
  • Function : Author
Laboratoire de génie électrique de Paris
N.A. Kaluzhniy
  • Function : Author
V. Lantratov
  • Function : Author
S.A. Mintairov
  • Function : Author

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00351244

Submitted on : Thursday, January 8, 2009-5:10:56 PM

Last modification on : Tuesday, February 14, 2023-3:37:28 AM

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hal-00351244 , version 1 (08-01-2009)

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  • HAL Id : hal-00351244 , version 1

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A.S. Gudovskikh, Jean-Paul Kleider, Rémy Chouffot, N.A. Kaluzhniy, V. Lantratov, et al.. Study of GaInP heterojunction solar cell interface properties by admittance spectroscopy. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings. ⟨hal-00351244⟩

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SUPELEC UPMC EC-PARIS CNRS SUP_LGEP CENTRALESUPELEC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE
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