Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments - Archive ouverte HAL

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Conference Papers Year : 2011

Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments

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1

Olga Maslova

Function : Author

Laboratoire de génie électrique de Paris

Aurore Brézard

Function : Author
PersonId : 5983
IdHAL : aurore-brezard

Laboratoire de génie électrique de Paris

Wilfried Favre

Function : Author

Laboratoire de génie électrique de Paris

José Alvarez

Function : Author
PersonId : 5252
IdHAL : jose-alvarez
ORCID : 0000-0003-3558-8302
IdRef : 089018222

Laboratoire de génie électrique de Paris

A.S. Gudovskikh

Function : Author

E.I Terukov

Function : Author

Jean-Paul Kleider

Function : Author
PersonId : 5984
IdHAL : jean-paul-kleider
ORCID : 0000-0003-4388-6326
IdRef : 03273039X

Laboratoire de génie électrique de Paris

Olivier Schneegans : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-00710779

Submitted on : Thursday, June 21, 2012-3:53:42 PM

Last modification on : Tuesday, February 14, 2023-3:36:21 AM

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hal-00710779 , version 1 (21-06-2012)

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HAL Id : hal-00710779 , version 1

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Olga Maslova, Aurore Brézard, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. ⟨hal-00710779⟩

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