Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001) - Archive ouverte HAL

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Conference Papers Year : 2014

Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)

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Mohamed Boutchich

Function : Author
PersonId : 11511
IdHAL : mohamed-boutchich
ORCID : 0000-0002-8460-448X
IdRef : 070369356

Laboratoire de génie électrique de Paris

Hakim Arezki

Function : Author

Laboratoire de génie électrique de Paris

David Alamarguy

Function : Author
PersonId : 6437
IdHAL : david-alamarguy
ORCID : 0000-0001-7617-3029
IdRef : 081093373

Laboratoire de génie électrique de Paris

K.I. Ho

Function : Author

Sediri Haikel

Function : Author

Fethullah Gunes

Function : Author

Department of Energy Science

José Alvarez

Function : Author
PersonId : 5252
IdHAL : jose-alvarez
ORCID : 0000-0003-3558-8302
IdRef : 089018222

Laboratoire de génie électrique de Paris

Jean-Paul Kleider

Function : Author
PersonId : 5984
IdHAL : jean-paul-kleider
ORCID : 0000-0003-4388-6326
IdRef : 03273039X

Laboratoire de génie électrique de Paris

Chao-Sung Lai

Function : Author

Abdelkarim Ouerghi

Function : Author
PersonId : 771800
ORCID : 0000-0002-1898-2765

Laboratoire de photonique et de nanostructures

Domains

Physics [physics]

Thierry Leblanc : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01104492

Submitted on : Friday, January 16, 2015-7:07:46 PM

Last modification on : Friday, March 24, 2023-2:53:00 PM

Dates and versions

hal-01104492 , version 1 (16-01-2015)

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HAL Id : hal-01104492 , version 1

Cite

Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Sediri Haikel, et al.. Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7PM-4. ⟨hal-01104492⟩

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