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Doping and characterization of trilayer graphene on 4H-SiC (0001)

Mohamed Boutchich
Laboratoire de génie électrique de Paris
CV
Hakim Arezki
  • Function : Author
Laboratoire de génie électrique de Paris
David Alamarguy
Laboratoire de génie électrique de Paris
K.I. Ho
  • Function : Author
Haikel Sediri
  • Function : Author
Fethullah Gunes
  • Function : Author
Department of Energy Science
José Alvarez
Laboratoire de génie électrique de Paris
CV
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV
C.S. Lai
  • Function : Author
A. Ouerghi
  • Function : Author
Laboratoire de photonique et de nanostructures

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Physics [physics]

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01104494

Submitted on : Friday, January 16, 2015-7:19:01 PM

Last modification on : Friday, March 24, 2023-2:53:00 PM

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hal-01104494 , version 1 (16-01-2015)

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  • HAL Id : hal-01104494 , version 1

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Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Haikel Sediri, et al.. Doping and characterization of trilayer graphene on 4H-SiC (0001). International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan. ⟨hal-01104494⟩

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