Doping and characterization of trilayer graphene on 4H-SiC (0001)

Mohamed Boutchich (1) , Hakim Arezki (1) , David Alamarguy (1) , K.I. Ho , Haikel Sediri , Fethullah Gunes (2) , José Alvarez (1) , Jean-Paul Kleider (1) , C.S. Lai , A. Ouerghi (3)

1 LGEP - Laboratoire de génie électrique de Paris
2 Department of Energy Science
3 LPN - Laboratoire de photonique et de nanostructures

Domaines: Physique [physics]

Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Haikel Sediri, et al.. Doping and characterization of trilayer graphene on 4H-SiC (0001). International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan. ⟨hal-01104494⟩