HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Poster communications

SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

Anne Talneau 1, * K Pantzas 1 A Durnez 1 G Patriarche 1 David Alamarguy 2 Eric Le Bourhis 3
* Corresponding author
1 LPN - Laboratoire de photonique et de nanostructures
2 GeePs - Laboratoire Génie électrique et électronique de Paris
3 PPRIME - Institut Pprime
Abstract : Oxide-mediated bonding of III-V layers on Silicon is demonstrated through ultra-thin –one monolayer-SiO2 ALD layer. XPS characterization of the SiO2 ALD layer evidences its surface activation with –OH dangling bonds, and allows determining the optimized ALD process parameters for a void-free bonded interface.
Keywords : SiO2 ALD layer hybrid bonding surface activation hybrid interface dangling bonds
Document type :
Poster communications
Complete list of metadata
https://hal-centralesupelec.archives-ouvertes.fr/hal-01245936
Contributor : David Alamarguy Connect in order to contact the contributor
Submitted on : Thursday, December 17, 2015 - 6:42:39 PM
Last modification on : Tuesday, November 16, 2021 - 4:14:21 AM

Identifiers

  • HAL Id : hal-01245936, version 1

Collections

CNRS | UNIV-POITIERS | UPMC | GEEPS | CENTRALESUPELEC | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | PPRIME | ANR | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Anne Talneau, K Pantzas, A Durnez, G Patriarche, David Alamarguy, et al.. SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces. 41st International Conference on Micro and Nano Engineering (MNE 2015), Sep 2015, The Hague, Netherlands. ⟨hal-01245936⟩

Export

BibTeX TEI DC DCterms EndNote Datacite

Share

Metrics

Record views

97