SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

Anne Talneau; K Pantzas; A Durnez; G Patriarche; David Alamarguy; Eric Le Bourhis

Poster communications

SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

Anne Talneau ^{1, *} K Pantzas ¹ A Durnez ¹ G Patriarche ¹ David Alamarguy ² Eric Le Bourhis ³

* Corresponding author

1 LPN - Laboratoire de photonique et de nanostructures

2 GeePs - Laboratoire Génie électrique et électronique de Paris

3 PPRIME - Institut Pprime

Abstract : Oxide-mediated bonding of III-V layers on Silicon is demonstrated through ultra-thin –one monolayer-SiO2 ALD layer. XPS characterization of the SiO2 ALD layer evidences its surface activation with –OH dangling bonds, and allows determining the optimized ALD process parameters for a void-free bonded interface.

Keywords : SiO2 ALD layer hybrid bonding surface activation hybrid interface dangling bonds

Document type :

Poster communications

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Materials

Engineering Sciences [physics] / Electronics

Engineering Sciences [physics] / Optics / Photonic

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01245936
Contributor : David Alamarguy Connect in order to contact the contributor
Submitted on : Thursday, December 17, 2015 - 6:42:39 PM
Last modification on : Saturday, June 25, 2022 - 10:18:36 PM

SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

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SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

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