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Poster communications

SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

Anne Talneau 1, * K Pantzas 1 A Durnez 1 G Patriarche 1 David Alamarguy 2 Eric Le Bourhis 3
* Corresponding author
1 LPN - Laboratoire de photonique et de nanostructures
2 GeePs - Laboratoire Génie électrique et électronique de Paris
3 PPRIME - Institut Pprime
Abstract : Oxide-mediated bonding of III-V layers on Silicon is demonstrated through ultra-thin –one monolayer-SiO2 ALD layer. XPS characterization of the SiO2 ALD layer evidences its surface activation with –OH dangling bonds, and allows determining the optimized ALD process parameters for a void-free bonded interface.
Keywords : SiO2 ALD layer hybrid bonding surface activation hybrid interface dangling bonds
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01245936
Contributor : David Alamarguy Connect in order to contact the contributor
Submitted on : Thursday, December 17, 2015 - 6:42:39 PM
Last modification on : Wednesday, October 20, 2021 - 3:22:14 AM

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  • HAL Id : hal-01245936, version 1

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CNRS | UNIV-POITIERS | UPMC | GEEPS | CENTRALESUPELEC | PHEMADIC | SORBONNE-UNIVERSITE | SU-SCIENCES | PPRIME | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Anne Talneau, K Pantzas, A Durnez, G Patriarche, David Alamarguy, et al.. SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces. 41st International Conference on Micro and Nano Engineering (MNE 2015), Sep 2015, The Hague, Netherlands. ⟨hal-01245936⟩

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