SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces - Archive ouverte HAL Access content directly
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SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

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Abstract

Oxide-mediated bonding of III-V layers on Silicon is demonstrated through ultra-thin –one monolayer-SiO2 ALD layer. XPS characterization of the SiO2 ALD layer evidences its surface activation with –OH dangling bonds, and allows determining the optimized ALD process parameters for a void-free bonded interface.
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Dates and versions

hal-01245936 , version 1 (17-12-2015)

Identifiers

  • HAL Id : hal-01245936 , version 1

Cite

Anne Talneau, K Pantzas, A Durnez, G Patriarche, David Alamarguy, et al.. SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces. 41st International Conference on Micro and Nano Engineering (MNE 2015), Sep 2015, The Hague, Netherlands. ⟨hal-01245936⟩
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