SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces
Abstract
Oxide-mediated bonding of III-V layers on Silicon is demonstrated through ultra-thin –one monolayer-SiO2 ALD layer. XPS characterization of the SiO2 ALD layer evidences its surface activation with –OH dangling bonds, and allows determining the optimized ALD process parameters for a void-free bonded interface.