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Poster communications

SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

Abstract : Oxide-mediated bonding of III-V layers on Silicon is demonstrated through ultra-thin –one monolayer-SiO2 ALD layer. XPS characterization of the SiO2 ALD layer evidences its surface activation with –OH dangling bonds, and allows determining the optimized ALD process parameters for a void-free bonded interface.
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01245936
Contributor : David Alamarguy Connect in order to contact the contributor
Submitted on : Thursday, December 17, 2015 - 6:42:39 PM
Last modification on : Tuesday, November 16, 2021 - 4:14:21 AM

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  • HAL Id : hal-01245936, version 1

Citation

Anne Talneau, K Pantzas, A Durnez, G Patriarche, David Alamarguy, et al.. SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces. 41st International Conference on Micro and Nano Engineering (MNE 2015), Sep 2015, The Hague, Netherlands. ⟨hal-01245936⟩

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