SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces

Anne Talneau (1) , K Pantzas (1) , A Durnez (1) , G Patriarche (1) , David Alamarguy (2) , Eric Le Bourhis (3)

1 LPN - Laboratoire de photonique et de nanostructures
2 GeePs - Laboratoire Génie électrique et électronique de Paris
3 PPRIME - Institut Pprime

Oxide-mediated bonding of III-V layers on Silicon is demonstrated through ultra-thin –one monolayer-SiO2 ALD layer. XPS characterization of the SiO2 ALD layer evidences its surface activation with –OH dangling bonds, and allows determining the optimized ALD process parameters for a void-free bonded interface.

Keywords: SiO2 ALD layer; hybrid bonding; surface activation; hybrid interface; dangling bonds

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Materials; Engineering Sciences [physics]; Electronics; Engineering Sciences [physics]; Optics / Photonic

Anne Talneau, K Pantzas, A Durnez, G Patriarche, David Alamarguy, et al.. SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces. 41st International Conference on Micro and Nano Engineering (MNE 2015), Sep 2015, The Hague, Netherlands. ⟨hal-01245936⟩