Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms - Archive ouverte HAL Access content directly
Conference Papers Year :

Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms

Not file

Dates and versions

hal-01363727 , version 1 (11-09-2016)

Identifiers

  • HAL Id : hal-01363727 , version 1

Cite

Junkang Wang, Federico Ventosinos, Christophe Longeaud, Bastien Bruneau, D. Daineka, et al.. Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms. E-MRS 2016 Spring Meeting, May 2016, Lille, France. ⟨hal-01363727⟩
110 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More