Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms - CentraleSupélec Accéder directement au contenu
Communication Dans Un Congrès Année : 2016

Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms

Fichier non déposé

Dates et versions

hal-01363727 , version 1 (11-09-2016)

Identifiants

  • HAL Id : hal-01363727 , version 1

Citer

Junkang Wang, Federico Ventosinos, Christophe Longeaud, Bastien Bruneau, D. Daineka, et al.. Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms. E-MRS 2016 Spring Meeting, May 2016, Lille, France. ⟨hal-01363727⟩
116 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More