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Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms

Junkang Wang 1 Federico Ventosinos 1 Christophe Longeaud 2 Bastien Bruneau 1 D. Daineka 1 Mustapha Elyaakoubi 3 E. Stephanos 3 Jean-Paul Kleider 2 Erik Johnson 1 
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 GeePs - Laboratoire Génie électrique et électronique de Paris
3 TFSC-Instrument
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01363727
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Sunday, September 11, 2016 - 2:48:02 PM
Last modification on : Sunday, June 26, 2022 - 5:21:56 AM

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  • HAL Id : hal-01363727, version 1

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Citation

Junkang Wang, Federico Ventosinos, Christophe Longeaud, Bastien Bruneau, D. Daineka, et al.. Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms. E-MRS 2016 Spring Meeting, May 2016, Lille, France. ⟨hal-01363727⟩

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