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Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01363727
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, September 11, 2016 - 2:48:02 PM
Last modification on : Wednesday, September 16, 2020 - 5:45:26 PM

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  • HAL Id : hal-01363727, version 1

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Junkang Wang, Federico Ventosinos, Christophe Longeaud, Bastien Bruneau, D. Daineka, et al.. Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms. E-MRS 2016 Spring Meeting, May 2016, Lille, France. ⟨hal-01363727⟩

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