Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescence - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (RRL) - Rapid Research Letters Year : 2017

Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescence

(1) , (1) , (1) , (1) , (1)
1

Abstract

Phone: þ33 (0)169851645, Fax: þ33 (0)169418318 By the combination of temperature-dependent spectral photo-luminescence with modulated photoluminescence measurements the band-to-band radiative recombination coefficient is determined for crystalline silicon without the requirement to model the temperature dependence of the intrinsic carrier density, thus eliminating a source of error. By application of this approach we reproduce the variation of the radiative recombination coefficient in crystalline silicon with temperature reported in the literature for temperatures !77 K. Above all, we extend the measured range for the radiative recombination coefficient to a temperature of 20 K. In this extended temperature range between 20 and 70 K the recombination coefficient increases with decreasing temperature by about three orders of magnitude.
Fichier principal
Vignette du fichier
Brueggemann_pssrrl201700066.pdf (909.84 Ko) Télécharger le fichier
Origin : Explicit agreement for this submission
Loading...

Dates and versions

hal-01631792 , version 1 (20-03-2020)

Identifiers

Cite

Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescence. physica status solidi (RRL) - Rapid Research Letters, 2017, 11 (6), ⟨10.1002/pssr.201700066⟩. ⟨hal-01631792⟩
161 View
151 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More