Interface properties of GaP/Si heterojunction fabricated by PE-ALD

Alexander S. Gudovskikh (1) , A.V. Uvarov (1) , I.A. Morozov (1) , Artem Baranov (1, 2) , D. A. Kudryashov (1) , K. S. Zelentsov (1) , Alexandre Jaffré (2) , Sylvain Le Gall (2) , Arouna Darga (2) , Jean-Paul Kleider (2)

1 Saint Petersburg Academic University
2 GeePs - Laboratoire Génie électrique et électronique de Paris

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Materials

Alexander S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Interface properties of GaP/Si heterojunction fabricated by PE-ALD. EMRS Spring Meeting 2018, Jun 2018, Strasbourg, France. ⟨hal-01801489⟩