Interface properties of GaP/Si heterojunction fabricated by PE-ALD

Alexander S. Gudovskikh; A.V. Uvarov; I.A. Morozov; Artem Baranov; D. A. Kudryashov; K. S. Zelentsov; Alexandre Jaffré; Sylvain Le Gall; Arouna Darga; Jean-Paul Kleider

Conference papers

Interface properties of GaP/Si heterojunction fabricated by PE-ALD

Alexander S. Gudovskikh ¹ A.V. Uvarov ¹ I.A. Morozov ¹ Artem Baranov ^{1, 2} D. A. Kudryashov ¹ K. S. Zelentsov ¹ Alexandre Jaffré ² Sylvain Le Gall ² Arouna Darga ² Jean-Paul Kleider ²

1 Saint Petersburg Academic University

2 GeePs - Laboratoire Génie électrique et électronique de Paris

Document type :

Conference papers

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Electric power

Engineering Sciences [physics] / Optics / Photonic

Engineering Sciences [physics] / Materials

Complete list of metadata

https://hal-centralesupelec.archives-ouvertes.fr/hal-01801489
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Monday, May 28, 2018 - 2:43:13 PM
Last modification on : Sunday, June 26, 2022 - 9:44:34 AM

Interface properties of GaP/Si heterojunction fabricated by PE-ALD

Identifiers

Collections

Citation

Export

Metrics

46

Interface properties of GaP/Si heterojunction fabricated by PE-ALD

Identifiers

Collections

Citation

Export

Share

Metrics

46