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Interface properties of GaP/Si heterojunction fabricated by PE-ALD

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hal-01801489 , version 1 (28-05-2018)

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  • HAL Id : hal-01801489 , version 1

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Alexander S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Interface properties of GaP/Si heterojunction fabricated by PE-ALD. EMRS Spring Meeting 2018, Jun 2018, Strasbourg, France. ⟨hal-01801489⟩
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