Interface properties of GaP/Si heterojunction fabricated by PE-ALD

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01801489
Contributor : Jean-Paul Kleider <>
Submitted on : Monday, May 28, 2018 - 2:43:13 PM
Last modification on : Thursday, September 12, 2019 - 5:16:02 PM

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  • HAL Id : hal-01801489, version 1

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Alexander S. Gudovskikh, A.V. Uvarov, I.A. Morozov, Artem Baranov, D. A. Kudryashov, et al.. Interface properties of GaP/Si heterojunction fabricated by PE-ALD. EMRS Spring Meeting 2018, Jun 2018, Strasbourg, France. ⟨hal-01801489⟩

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