Syntheses of (Pb-Sn-Ti)O-3 thin films by PLD method and their structural and ferroelectric properties

J. Iwasaki (1) , Y. Uesu (1) , P.-E. Janolin (2) , Jean-Michel Kiat (2) , H. Yokota (3) , R. Haumant (4)

1 Waseda University [Tokyo, Japan]
2 SPMS - Laboratoire Structures, Propriétés et Modélisation des solides
3 Chiba University
4 UP11 - Université Paris-Sud - Paris 11

(Pb-Sn-Ti)O-3 (PST) thin films are fabricated by the pulse laser deposition method with three ceramic targets of PbO, SnO and TiO2 with consecutive sequences of deposition. Lattice parameters of PST thin film are a=b=0.3993 nm, c=0.4048 nm. This fact together with TEM-EDX results suggests that PST films are the mixed state of PbTiO3-SnTiO3-PbSnO3. Real part of dielectric constant and remanent polarization are determined to be about 1000 and 35 mu C/cm(2) at room temperature, respectively. X-ray diffraction reveals that a structural phase transition takes place at 600 degrees C. Piezoelectric response is confirmed by a piezo-force scanning microscope.

Mots clés: Ti)O-3 thin film; PLD method; (Pb; Piezoelectricity; Ferroelectricity; Sn

Domaines: Matériaux

J. Iwasaki, Y. Uesu, P.-E. Janolin, Jean-Michel Kiat, H. Yokota, et al.. Syntheses of (Pb-Sn-Ti)O-3 thin films by PLD method and their structural and ferroelectric properties. Joint Conference on IEEE International Symposium on Applications of Ferroelectrics (ISAF/PFM)/ International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Jul 2011, Vancouver, Canada. ⟨hal-02186463⟩