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High-Frequency Modulated Photoluminescence: a simulation study of case describing the signature of carrier recombination and trap centers

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Abstract

A new setup for recording time dependent photoluminescence signal in both transient and modulated regime was previously assembled. The modulated photoluminescence experiment was achieved in a high frequency domain (up to 10 MHz) while keeping high sensitivity. The methods can thus be applied both to silicon and thin film absorbers. A simulation program was developed for the reconstruction of the experimental data in both time resolved and frequency resolved regimes. In this work we focus on the simulation part and discuss the ability of our setup to identify the carrier recombination paths in thin film solar cells. First results confirm that it should be possible to discriminate between different mechanisms such as radiative, non-radiative recombination and trapping.
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Dates and versions

hal-02343925 , version 1 (28-04-2020)

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Baptiste Bérenguier, Nicolas Moron, Wei Zhao, Jean-François Guillemoles, Jean-Paul Kleider, et al.. High-Frequency Modulated Photoluminescence: a simulation study of case describing the signature of carrier recombination and trap centers. 46th IEEE Photovoltaic Specialists Conference (PVSC 46), Jun 2019, Chicago, United States. pp.352, ⟨10.1109/PVSC40753.2019.8980539⟩. ⟨hal-02343925⟩
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