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Approaching Theoretical Band Gap of ZnSnN 2 Films via Bias Magnetron Cosputtering at Room Temperature

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https://hal-centralesupelec.archives-ouvertes.fr/hal-03361326
Contributor : Christophe Longeaud Connect in order to contact the contributor
Submitted on : Friday, October 1, 2021 - 12:30:20 PM
Last modification on : Saturday, October 16, 2021 - 11:20:13 AM

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Agathe Virfeu, Fahad Alnjiman, Jaafar Ghanbaja, Alejandro Borroto, Christine Gendarme, et al.. Approaching Theoretical Band Gap of ZnSnN 2 Films via Bias Magnetron Cosputtering at Room Temperature. ACS Applied Electronic Materials, American Chemical Society, 2021, 3 (9), pp.3855-3866. ⟨10.1021/acsaelm.1c00478⟩. ⟨hal-03361326⟩

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