Photoconductivity measurements used to determine the defect density within the gap of intrinsic semiconductors - CentraleSupélec Access content directly
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Photoconductivity measurements used to determine the defect density within the gap of intrinsic semiconductors

J.A. Schmidt
  • Function : Author
Christophe Longeaud
Laboratoire de génie électrique de Paris
R.R. Koropecki
  • Function : Author
R. Arce
  • Function : Author

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00321562

Submitted on : Monday, September 15, 2008-12:15:22 PM

Last modification on : Friday, March 24, 2023-2:52:50 PM

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hal-00321562 , version 1 (15-09-2008)

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  • HAL Id : hal-00321562 , version 1

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J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, R. Arce. Photoconductivity measurements used to determine the defect density within the gap of intrinsic semiconductors. Hyperfine Interaction at La Plata, 2005, Argentina. ⟨hal-00321562⟩

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SUPELEC UPMC EC-PARIS CNRS SUP_LGEP CENTRALESUPELEC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE
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