High diffusion length silicon germanium alloys thin films deposited by pulsed rf PECVD method

P. Chaudhuri; A. Bhaduri; A. Bandyopadhyay; S. Vignoli; P.P. Ray; Christophe Longeaud

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High diffusion length silicon germanium alloys thin films deposited by pulsed rf PECVD method

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P. Chaudhuri

Function : Author

A. Bhaduri

Function : Author

A. Bandyopadhyay

Function : Author

S. Vignoli

Function : Author

P.P. Ray

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Christophe Longeaud

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PersonId : 6409
IdHAL : christophe-longeaud
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Laboratoire de génie électrique de Paris

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00322282

Submitted on : Wednesday, September 17, 2008-11:08:17 AM

Last modification on : Friday, March 24, 2023-2:52:51 PM

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hal-00322282 , version 1 (17-09-2008)

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P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, S. Vignoli, P.P. Ray, et al.. High diffusion length silicon germanium alloys thin films deposited by pulsed rf PECVD method. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. ⟨hal-00322282⟩

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High diffusion length silicon germanium alloys thin films deposited by pulsed rf PECVD method

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