Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates - Archive ouverte HAL Access content directly
Journal Articles Journal of Crystal Growth Year : 2008

Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

A. Ougazzaden
D. J. Rogers
  • Function : Author
F. Hosseini Teherani
  • Function : Author
T. Moudakir
  • Function : Author
S. Gautier
  • Function : Author
T. Aggerstam
  • Function : Author
S. Ould Saad
CV
J. Martin
Zakaria Djebbour
  • Function : Author
Laboratoire de génie électrique de Paris
O. Durand
  • Function : Author
G. Garry
  • Function : Author
A. Lusson
  • Function : Author
D. Mcgrouther
  • Function : Author
J.N. Chapman
  • Function : Author

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00350864

Submitted on : Wednesday, January 7, 2009-4:53:17 PM

Last modification on : Friday, March 24, 2023-2:52:51 PM

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hal-00350864 , version 1 (07-01-2009)

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  • HAL Id : hal-00350864 , version 1

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A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 2008, pp.944. ⟨hal-00350864⟩

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