Electrical properties of V2O5 thin films obtained by Atomic Layer Deposition (ALD) - Archive ouverte HAL Access content directly
Journal Articles Journal of Materials Chemistry Year : 2004
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hal-00352361 , version 1 (12-01-2009)

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  • HAL Id : hal-00352361 , version 1

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Jean-Claude Badot, A. Mantoux, Noël Baffier, Olivier Dubrunfaut, Daniel Lincot. Electrical properties of V2O5 thin films obtained by Atomic Layer Deposition (ALD). Journal of Materials Chemistry, 2004, 14, pp.3411-3415. ⟨hal-00352361⟩
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