Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique - CentraleSupélec Access content directly
Journal Articles Journal of Physics: Condensed Matter Year : 2009

Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique

Christophe Longeaud
Laboratoire de génie électrique de Paris
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV
P. Kaminski
  • Function : Author
R. Kozlowski
  • Function : Author
M. Miczuga
  • Function : Author

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00445958

Submitted on : Monday, January 11, 2010-4:15:27 PM

Last modification on : Friday, March 24, 2023-2:52:52 PM

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hal-00445958 , version 1 (11-01-2010)

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  • HAL Id : hal-00445958 , version 1

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Christophe Longeaud, Jean-Paul Kleider, P. Kaminski, R. Kozlowski, M. Miczuga. Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique. Journal of Physics: Condensed Matter, 2009, 21, pp. 045801-045815. ⟨hal-00445958⟩

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